Trench gate design dual igbtmod – C&H Technology CM200DU-12F User Manual
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Trench Gate Design
Dual IGBTMOD™
200 Amperes/600 Volts
CM200DU-12F
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Outline Drawing and Circuit Diagram
1
Description:
Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module con-
sists of two IGBT Transistors in a
half-bridge configuration with each
transistor having a reverse-con-
nected super-fast recovery free-
wheel diode. All components and
interconnects are isolated from the
heat sinking baseplate, offering
simplified system assembly and
thermal management.
Features:
£
Low Drive Power
£
Low V
CE(sat)
£
Discrete Super-Fast Recovery
Free-Wheel Diode
£
Isolated Baseplate for Easy
Heat Sinking
Applications:
£
AC Motor Control
£
UPS
£
Battery Powered Supplies
Ordering Information:
Example: Select the complete
module number you desire from
the table - i.e. CM200DU-12F is a
600V (V
CES
), 200 Ampere Dual
IGBTMOD™ Power Module.
Current Rating
V
CES
Type
Amperes
Volts (x 50)
CM
200
12
Dimensions
Inches
Millimeters
A
3.70
94.0
B
1.89
48.0
C
1.18 +0.04/-0.02 30.0 +1.0/-0.5
D
3.15±0.01
80.0±0.25
E
0.43
11.0
F
0.16
4.0
G
0.71
18.0
H
0.02
0.5
J
0.53
13.5
K
0.91
23.0
L
0.83
21.2
M
0.67
17.0
Dimensions
Inches
Millimeters
N
0.28
7.0
P
M5
M5
Q
Dia. 0.26
6.5 Dia.
R
0.02
4.0
S
0.30
7.5
T
0.63
16.0
U
0.10
2.5
V
1.0
25.0
W
0.94
24.0
X
0.51
13.0
Y
0.47
12.0
Z
0.47
12.0
Q (2
PLACES)
CM
A
B
W
C
D
R
U
U
T
V
T
K
K
P - NUTS (3 TYP)
C2E1
E2
C1
X
M
N
E
F
G
F
J
Y
L
S
H (4
PLACES)
E2
G2
G1
E1
TC MEASURED POINT
C2E1
RTC
RTC
E2
E1
G1
C1
E2
G2