C&H Technology CM100TU-12F - Manual (Page 4)

3
CM100TU-12F
Trench Gate Design Six IGBTMOD™
100 Amperes/600 Volts
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Dynamic Electrical Characteristics, T
j
= 2 5
°
C unless othe rwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Input Capacitance C ies – – 27 nf
Output Capacitance C
oes
V
CE
= 10V, V
GE
= 0V – – 1.8 nf
Reverse Transfer Capacitance C
res
– – 1 nf
Inductive Turn-on Delay Time t
d(on)
V
CC
= 300V, I
C
= 100A, – – 100 ns
Load Rise Time t
r
V
GE1
= V
GE2
= 15V, – – 80 ns
Switch Turn-off Delay Time t
d(off)
R
G
= 6.3 ⍀ , – – 300 ns
Times Fall Time t f Inductive Load – – 250 ns
Diode Reverse Recovery Time** t
rr
Switching Operation – – 150 ns
Diode Reverse Recovery Charge** Q
rr
I
E
= 100A – 1.9 –
µ
C
Thermal and Mechanical Characteristics, T
j
= 2 5
°
C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Thermal Resistance, Junction to Case R th(j-c) Q Per IGBT 1/6 Module, T c Reference – 0.35
°
C/W
Point per Outline Drawing
Thermal Resistance, Junction to Case R
th(j-c)
D Per FWDi 1/6 Module, T
c
Reference – – 0.70 ° C/W
Point per Outline drawing
Thermal Resistance, Junction to Case R
th(j-c)
'Q Per IGBT 1/6 Module, – 0.23
°
C/W
T c Reference Point Under Chip
Contact Thermal Resistance R th(c-f) Per Module, Thermal Grease Applied – 0.018 –
°
C/W
** Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).