C&H Technology CM200RX-12A - Manual (Page 4)

CM200RX-12A
Six IGBTMOD™ + Brake NX-Series Module
200 Amperes/600 Volts
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
3 Rev. 11/08
Electrical and Mechanical Characteristics, T
j
= 25°C unless otherwise specified
Inverter Sector
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector Cutoff Current I
CES
V
CE
= V
CES
, V
GE
= 0V — — 1.0 mA
Gate-Emitter Threshold Voltage V
GE(th)
I
C
= 20mA, V
CE
= 10V 5 6 7 Volts
Gate Leakage Current I
GES
V
GE
= V
GES
, V
CE
= 0V — — 0.5 µA
Collector-Emitter Saturation Voltage V
CE(sat)
I
C
= 200A, V
GE
= 15V, T
j
= 25°C — 1.7 2.1 Volts
I
C
= 200A, V
GE
= 15V, T
j
= 125°C — 1.9 — Volts
I
C
= 200A, V
GE
= 15V, Chip — 1.6 — Volts
Input Capacitance C
ies
— — 27.0 nF
Output Capacitance C
oes
V
CE
= 10V, V
GE
= 0V — — 2.7 nF
Reverse Transfer Capacitance C
res
— — 0.8 nF
Total Gate Charge Q
G
V
CC
= 300V, I
C
= 200A, V
GE
= 15V — 530 — nC
Inductive Turn-on Delay Time t
d(on)
— — 120 ns
Load Turn-on Rise Time t
r
V
CC
= 300V, I
C
= 200A, — — 150 ns
Switch Turn-off Delay Time t
d(off)
V
GE
= ±15V, — — 350 ns
Time Turn-off Fall Time t
f
R
G
= 5.6Ω, I
E
= 150A, — — 600 ns
Reverse Recovery Time* t
rr
Inductive Load Switching Operation — — 200 ns
Reverse Recovery Charge* Qrr — 5.0 — µC
Emitter-Collector Voltage* V
EC
I
E
= 200A, V
GE
= 0V, T
j
= 25°C — 2.0 2.8 Volts
I
E
= 200A, V
GE
= 0V, T
j
= 125°C — 1.95 — Volts
I
E
= 200A, V
GE
= 0V, Chip — 1.9 — Volts
Thermal and Mechanical Characteristics, T
j
= 25°C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Thermal Resistance, Junction to Case** R
th(j-c)
Q Per IGBT — — 0.17 °C/W
Thermal Resistance, Junction to Case** R
th(j-c)
D Per FWDi — — 0.33 °C/W
Contact Thermal Resistance** R
th(c-f)
Thermal Grease Applied — 0.015 — °C/W
Internal Gate Resistance R
Gint
T
C
= 25°C — 0 — Ω
External Gate Resistance R
G
3.0 — 30 Ω
*Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
**T
C
, T
f
measured point is just under the chips.
34
0
0
0
0
33 32 31 30 29 28 27 26 25 24 23 22
Dimensions in mm (Tolerance: ±1mm)
21 20 19 18 17 16 15 14 13
12
35
36
1 2 3 4
11
10
9
8
7
6
5
IGBT FWDi NTC Thermistor
Chip Location (Top View)
17.4
22.9 33.9 44.9 55.9 79.4 92.4 106.0
39.7
24.4
U P V P W P
W N V N U N
Br
100.2
26.8
Th
22.9 33.9 44.9 55.9 79.4 91
.4
10
1.
8
18.3
28.0
35.0
U P V P W P
W N
Br
V N U N
CHIP LOCATION (TOP VIEW)