C&H Technology CM300DU-12NFH User Manual
Page 3
CM300DU-12NFH
Dual IGBTMOD™ NFH-Series Module
300 Amperes/600 Volts
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
7/11 Rev. 1
2
Absolute Maximum Ratings,
Tj = 25 °C unless otherwise specified
Ratings
Symbol CM300DU-12NF Units
Junction Temperature
Tj
–40 to 150
°C
Storage Temperature
Tstg
–40 to 125
°C
Collector-Emitter Voltage (G-E Short)
VCES
6 00
Volts
Gate-Emitter Voltage (C-E Short)
VGES ±20 Volts
Collector Current (TC = 25°C)
IC
300* Amperes
Peak Collector Current
ICM
600* Amperes
Emitter Current** (TC = 25°C)
IE
300* Amperes
Peak Emitter Current**
IEM
600* Amperes
Maximum Collector Dissipation (TC = 25°C, Tj ≤ 150°C)
PC 780 Watts
Maximum Collector Dissipation (TC' = 25°C, Tj' ≤ 150°C)
PC 1250 Watts
Mounting Torque, M6 Main Terminal
—
40
in-lb
Mounting Torque, M6 Mounting
—
40
in-lb
Weight
—
400 Grams
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)
VISO 2500 Volts
Static Electrical Characteristics,
Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Collector-Cutoff Current
ICES VCE = VCES, VGE = 0V
—
—
1.0
mA
Gate Leakage Current IGES VGE = VGES, VCE = 0V
—
—
0.5
µA
Gate-Emitter Threshold Voltage
VGE(th) IC = 30mA, VCE = 10V
5.0
6.0
7.0
Volts
Collector-Emitter Saturation Voltage
VCE(sat) IC = 300A, VGE = 15V, Tj = 25°C
—
2.0
2.7
Volts
IC = 300A, VGE = 15V, Tj = 125°C
—
1.95
—
Volts
Total Gate Charge
QG VCC = 300V, IC = 300A, VGE = 15V
—
1860
—
nC
Emitter-Collector Voltage**
VEC IE = 300A, VGE = 0V
—
—
2.6
Volts
Dynamic Electrical Characteristics,
Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Input Capacitance
Cies
—
—
83
nf
Output Capacitance
Coes VCE = 10V, VGE = 0V
—
—
5.4
nf
Reverse Transfer Capacitance
Cres
—
—
3.0
nf
Inductive
Turn-on Delay Time
td(on)
— — 350 ns
Load
Rise Time
tr VCC = 300V, IC = 300A,
—
—
150
ns
Switch
Turn-off Delay Time
td(off) VGE1 = VGE2 = 15V, RG = 4.2Ω,
—
—
700
ns
Time
Fall Time
tf
Inductive Load Switching Operation,
—
—
150
ns
Diode Reverse Recovery Time**
trr IE = 300A
—
—
200
ns
Diode Reverse Recovery Charge**
Qrr
— 5.5 — µC
* Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).