C&H Technology CM150DU-24NFH User Manual

Page 3

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CM150DU-24NFH
Dual IGBTMOD™ NFH-Series Module
150 Amperes/1200 Volts

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272

2

Rev. 11/09

Absolute Maximum Ratings,

Tj = 25 °C unless otherwise specified

Ratings

Symbol

CM150DU-24NF

Units

Junction Temperature

Tj

–40 to 150

°C

Storage Temperature

Tstg

–40 to 125

°C

Collector-Emitter Voltage (G-E Short)

VCES

1200

Volts

Gate-Emitter Voltage (C-E Short)

VGES

±20

Volts

Collector Current (TC = 25°C)

IC

150*

Amperes

Peak Collector Current

ICM

300*

Amperes

Emitter Current** (TC = 25°C)

IE

150*

Amperes

Peak Emitter Current**

IEM

300*

Amperes

Maximum Collector Dissipation (TC = 25°C, Tj ≤ 150°C)

PC

650

Watts

Maximum Collector Dissipation (TC' = 25°C, Tj' ≤ 150°C)

PC

960

Watts

Mounting Torque, M5 Main Terminal

30

in-lb

Mounting Torque, M6 Mounting

40

in-lb

Weight

310

Grams

Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)

VISO

2500

Volts

Static Electrical Characteristics,

Tj = 25 °C unless otherwise specified

Characteristics

Symbol

Test Conditions

Min.

Typ.

Max.

Units

Collector-Cutoff Current

ICES

VCE = VCES, VGE = 0V

1.0

mA

Gate Leakage Current

IGES

VGE = VGES, VCE = 0V

0.5

µA

Gate-Emitter Threshold Voltage

VGE(th)

IC = 15mA, VCE = 10V

4.5

6.0

7.5

Volts

Collector-Emitter Saturation Voltage

VCE(sat)

IC = 150A, VGE = 15V, Tj = 25°C

5.0

6.5

Volts

IC = 150A, VGE = 15V, Tj = 125°C

5.0

Volts

Total Gate Charge

QG

VCC = 600V, IC = 150A, VGE = 15V

680

nC

Emitter-Collector Voltage**

VEC

IE = 150A, VGE = 0V

3.5

Volts

Dynamic Electrical Characteristics,

Tj = 25 °C unless otherwise specified

Characteristics

Symbol

Test Conditions

Min.

Typ.

Max.

Units

Input Capacitance

Cies

24

nf

Output Capacitance

Coes

VCE = 10V, VGE = 0V

2.0

nf

Reverse Transfer Capacitance

Cres

0.45

nf

Inductive

Turn-on Delay Time

td(on)

150

ns

Load

Rise Time

tr

VCC = 600V, IC = 150A,

80

ns

Switch

Turn-off Delay Time

td(off)

VGE1 = VGE2 = 15V, RG = 2.1Ω,

400

ns

Time

Fall Time

tf

Inductive Load Switching Operation,

150

ns

Diode Reverse Recovery Time**

trr

IE = 150A

150

ns

Diode Reverse Recovery Charge**

Qrr

7.5

µC

* Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating.

**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).

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