C&H Technology 10RIA Series - Manual (Page 4)

10RIA Series
Bulletin I2405 rev. B 04/06
dv/dt Max. critical rate of rise of 100 T
J
= T
J
max. linear to 100% rated V
DRM
off-state voltage 300 (*) T
J
= T
J
max. linear to 67% rated V
DRM
V/μs
Parameter 10RIA Units Conditions
Blocking
P
GM
Maximum peak gate power 8.0 T
J
= T
J
max.
P
G(AV)
Maximum average gate power 2.0
I
GM
Max. peak positive gate current 1.5 A T
J
= T
J
max.
-V
GM
Maximum peak negative 10 V T
J
= T
J
max.
gate voltage
I
GT
DC gate current required 90 T
J
= - 65°C
to trigger 60 mA T
J
= 25°C
35 T
J
= 125°C
V
GT
DC gate voltage required 3.0 T
J
= - 65°C
to trigger 2.0 V T
J
= 25°C
1.0 V T
J
= 125°C
I
GD
DC gate current not to trigger 2.0 mA T
J
= T
J
max., V
DRM
= rated value
V
GD
DC gate voltage not to trigger 0.2 V T
J
= T
J
max.
V
DRM
= rated value
W
Max. required gate trigger current/
voltage are the lowest value which
will trigger all units 6V anode-to-
cathode applied
Max. gate current/ voltage not to
trigger is the max. value which
will not trigger any unit with rated
V
DRM
anode-to-cathode applied
Parameter 10RIA Units Conditions
Triggering
di/dt Max. rate of rise of turned-on T
J
= T
J
max., V
DM
= rated V
DRM
current V
DRM
≤ 600V 200 A/μs Gate pulse = 20V, 15 Ω, t
p
= 6μs, t
r
= 0.1μs max.
V
DRM
≤ 800V 180 I
TM
= (2x rated di/dt) A
V
DRM
≤ 1000V 160
V
DRM
≤ 1600V 150
t
gt
Typical turn-on time 0.9 T
J
= 25°C,
at = rated V
DRM
/V
RRM
, T
J
= 125°C
t
rr
Typical reverse recovery time 4 μs T
J
= T
J
max.,
I
TM
= I
T(AV)
, t
p
> 200μs, di/dt = -10A/μs
t
q
Typical turn-off time 110 T
J
= T
J
max., I
TM
= I
T(AV)
, t
p
> 200μs, V
R
= 100V,
di/dt = -10A/μs, dv/dt = 20V/μs linear to
67% V
DRM
, gate bias 0V-100W
Parameter 10RIA Units Conditions
Switching
(**) Available with: dv/dt = 1000V/μs, to complete code add S90 i.e. 10RIA120S90.
(*) t
q
= 10μsup to 600V, t
q
= 30μs up to 1600V available on special request.
Document Number: 93689 www.vishay.com
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