C&H Technology CM150DY-28H User Manual
Page 3
2
CM150DY-28H
Dual IGBTMOD™ H-Series Module
150 Amperes/1400 Volts
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Absolute Maximum Ratings,
T
j
= 25
°
C unless otherwise specified
Ratings
Symbol
CM150DY-28H
Units
Junction Temperature
T
j
–40 to 150
°
C
Storage Temperature
T
stg
–40 to 125
°
C
Collector-Emitter Voltage (G-E SHORT)
V
CES
1400
Volts
Gate-Emitter Voltage (C-E SHORT)
V
GES
±
20
Volts
Collector Current
I
C
150
Amperes
Peak Collector Current
I
CM
300**
Amperes
Emitter Current
I
E
*
150
Amperes
Emitter Current-Pulse
I
EM
*
300**
Amperes
Maximum Collector Dissipation
P
c
1100***
Watts
Max. Mounting Torque M5 Terminal Screws
–
17
in-lb
Max. Mounting Torque M6 Mounting Screws
–
26
in-lb
Module Weight (Typical)
–
270
Grams
V Isolation
V
RMS
2500
Volts
* I
E
, V
EC
, T
rr
, Q
rr
& di
E
/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi).
** Pulse width and repetition rate should be such that the device junction temp. (T
j
) does not exceed T
j(max)
rating.
*** Junction temperature (T
j
) should not increase beyond 150
°
C.
Static Electrical Characteristics,
T
j
= 25
°
C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Collector-Cutoff Current
I
CES
V
CE
= V
CES
, V
GE
= 0V
–
–
1.0
mA
Gate Leakage Current
I
GES
V
GE
= V
GES
, V
CE
= 0V
–
–
0.5
µ
A
Gate-Emitter Threshold Voltage
V
GE(th)
I
C
= 15mA, V
CE
= 10V
5.0
6.5
8.0
Volts
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
= 150A, V
GE
= 15V
–
3.1
4.2*
Volts
I
C
= 150A, V
GE
= 15V, T
j
= 125
°
C
–
2.95
–
Volts
Total Gate Charge
Q
G
V
CC
= 800V, I
C
= 150A, V
GE
= 15V
–
765
–
nC
* Pulse width and repetition rate should be such that device junction temperature rise is negligible.
Dynamic Electrical Characteristics,
T
j
= 25
°
C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Input Capacitance
C
ies
–
–
30
nF
Output Capacitance
C
oes
V
GE
= 0V, V
CE
= 10V
–
–
10.5
nF
Reverse Transfer Capacitance
C
res
–
–
6
nF
Resistive
Turn-on Delay Time
t
d(on)
–
–
250 ns
Load
Rise Time
t
r
V
CC
= 800V, I
C
= 150A,
–
–
400 ns
Switching
Turn-off Delay Time
t
d(off)
V
GE1
= V
GE2
= 15V, R
G
= 2.1
Ω
–
–
300 ns
Times
Fall Time
t
f
–
–
500
ns
Diode Reverse Recovery Time
t
rr
I
E
= 150A, di
E
/dt = –300A/
µ
s
–
–
300
ns
Emitter-Collector Voltage
V
EC
I
E
= 150A, V
GE
= 0V
–
–
3.8
V
Diode Reverse Recovery Charge
Q
rr
I
E
= 150A, di
E
/dt = –300A/
µ
s
–
1.5
–
µ
C
Thermal and Mechanical Characteristics,
T
j
= 25
°
C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Thermal Resistance, Junction to Case
R
th(j-c)
Per IGBT
–
–
0.11
°
C/W
Thermal Resistance, Junction to Case
R
th(j-c)
Per FWDi
–
–
0.24
°
C/W
Contact Thermal Resistance
R
th(c-f)
Per Module, Thermal Grease Applied
–
–
0.13
°
C/W