C&H Technology CM1500HC-66R - Manual (Page 4)

MITSUBISHI HVIGBT MODULES
CM1500HC-66R
HIGH POWER SWITCHING USE
4 th -Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules INSULATED TYPE
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) MODULES
HVM-1054-C 3 of 9
Limits
Symbol Item Conditions
Min Typ Max
Unit
T
j
= 25°C — 2.70 —
T
j
= 125°C — 2.80 3.30 t
d(off)
Turn-off delay time
T
j
= 150°C — 2.85 3.30
µs
T
j
= 25°C — 0.30 —
T
j
= 125°C — 0.35 1.00 t
f
Turn-off fall time
T
j
= 150°C — 0.40 1.00
µs
T
j
= 25°C — 2.00 —
T
j
= 125°C — 2.45 — E
off(10%)
Turn-off switching energy (Note 5)
T
j
= 150°C — 2.50 —
J/P
T
j
= 25°C — 2.20 —
T
j
= 125°C — 2.70 — E
off
Turn-off switching energy (Note 6)
V
CC
= 1800 V
I
C
= 1500 A
V
GE
= ±15 V
R
G(off)
= 5.6 Ω
L
s
= 100 nH
Inductive load
T
j
= 150°C — 2.80 —
J/P
T
j
= 25°C — 2.15 —
T
j
= 125°C — 2.30 2.80 V
EC
Emitter-collector voltage (Note 2)
I
E
= 1500 A (Note 4)
V
GE
= 0 V
T
j
= 150°C — 2.25 —
V
T
j
= 25°C — 0.50 —
T
j
= 125°C — 0.70 — t
rr
Reverse recovery time (Note 2)
T
j
= 150°C — 0.80 —
µs
T
j
= 25°C — 1250 —
T
j
= 125°C — 1500 — I
rr
Reverse recovery current (Note 2)
T
j
= 150°C — 1550 —
A
T
j
= 25°C — 1050 —
T
j
= 125°C — 1700 — Q
rr
Reverse recovery charge (Note 2)
T
j
= 150°C — 2000 —
µC
T
j
= 25°C — 1.05 —
T
j
= 125°C — 1.75 — E
rec(10%)
Reverse recovery energy (Note 2)
(Note 5)
T
j
= 150°C — 2.00 —
J/P
T
j
= 25°C — 1.20 —
T
j
= 125°C — 2.00 — E
rec
Reverse recovery energy (Note 2)
(Note 6)
V
CC
= 1800 V
I
C
= 1500 A
V
GE
= ±15 V
R
G(on)
= 1.6 Ω
L
s
= 100 nH
Inductive load
T
j
= 150°C — 2.30 —
J/P