Trench gate design dual igbtmod – C&H Technology CM100DUS-12F User Manual

Page 2

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Trench Gate Design
Dual IGBTMOD™

100 Amperes/600 Volts

CM100DUS-12F

Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272

Outline Drawing and Circuit Diagram

Q (2 PLACES)

CM

A

B

S

T

T

U

U

W

V

D

R

K

K

C2E1

E2

C1

#110 TAB x H THICK

(4 PLACES)

X

Y

M

N

E

F

G

F

J

E2

G2

G1

E1

P - NUTS x Z DEEP (3 PLACES)

TC MEASURED

POINT

C

L

C2E1

RTC

RTC

E2

E1
G1

C1

E2

G2

1

Dimensions

Inches

Millimeters

A

3.70

94.0

B

1.89

48.0

C

1.18 +0.04/-0.02 30.0 +1.0/-0.5

D

3.15±0.01

80.0±0.25

E

0.43

11.0

F

0.16

4.0

G

0.71

18.0

H

0.02

0.5

J

0.53

13.5

K

0.91

23.0

L

0.83

21.2

M

0.67

17.0

Dimensions

Inches

Millimeters

N

0.28

7.0

P

M5

M5

Q

0.26 Dia.

6.5 Dia.

R

0.02

4.0

S

0.30

7.5

T

0.63

16.0

U

0.10

2.5

V

1.0

25.0

W

0.94

24.0

X

0.51

13.0

Y

0.47

12.0

Z

0.47

12.0

Description:
Powerex IGBTMOD™ Modules
are designed for use in high
frequency applications; 30 kHz
for hard switching applications
and 60 to 70 kHz for soft switching
applications. Each module
consists of two IGBT Transistors
in a half-bridge configuration with
each transistor having a reverse-
connected super-fast recovery
free-wheel diode. All components
and interconnects are isolated
from the heat sinking baseplate,
offering simplified system assem-
bly and thermal management.

Features:
£

Low V

CE(sat)

£

Low E

SW(off)

£

Discrete Super-Fast Recovery

Free-Wheel Diode

£

Isolated Baseplate for Easy

Heat Sinking

Applications:
£

Power Supplies

£

Induction Heating

£

Welders

Ordering Information:
Example: Select the complete
module number you desire from
the table - i.e. CM100DUS-12F is
a 600V (V

CES

), 100 Ampere Dual

IGBTMOD™ Power Module.

Current Rating

V

CES

Type

Amperes

Volts (x 50)

CM

100

12

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