Vishay high power products, Stud-mounted silicon rectifier diodes, 15 a – C&H Technology 1N3208 User Manual
Page 4
Document Number: 93496
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Revision: 24-Jun-08
3
1N3208 Series
Stud-Mounted
Silicon Rectifier Diodes, 15 A
Vishay High Power Products
Fig. 1 - Average Forward Current vs.
Maximum Allowable Case Temperature
Fig. 2 - Maximum Non-Repetitive Surge Current vs.
Number of Current Pulses
Fig. 3 - Maximum Low Level Forward Power Loss vs.
Average Forward Current
Fig. 4 - Maximum High Level Forward Power Loss vs.
Average Forward Current
Fig. 5 - Maximum Forward Voltage vs. Forward Current
Ø
Conduction period
180°
120°
60°
DC
110
0
5
10
15
20
25
30
35
120
130
140
150
160
170
180
A
vera
g
e
Forwar
d Current
Over Full Cyc
le (A)
Maximum Allowable Case Temperature (°C)
At any rated load condition and
with rated V
RRM
following surge
P
e
ak Half Sine
W
a
ve
Forwar
d Current (A)
Number of Equal Amplitude
Half Cycle Current Pulses (N)
1
100
150
200
250
2
4
6 8 10
20
40 60
50 Hz
60 Hz
Ø
Conduction period
180°
120°
60°
DC
T
J
= 140 °C
0
0
10
20
30
40
50
60
70
80
90
100
120
10
20
30
40
50
60
70
80
90
A
v
era
g
e Forwar
d P
o
wer Loss
Over Full Cyc
le (W)
Average Forward Current Over Full Cycle (A)
10
10
10
2
10
2
10
3
10
4
10
3
10
4
10
5
A
vera
g
e
Forwar
d P
o
wer Loss
Over Full Cyc
le (W)
Average Forward Current Over Full Cycle (A)
Ø
Conduction period
T
J
= 140 °C
DC
60°
180°
120°
Instantaneous Forwar
d Current (A)
Instantaneous Forward Voltage (V)
1
0
1
2
3
4
5
6
7
10
10
2
10
3
T
J
= 140 °C
T
J
= 25 °C
LINKS TO RELATED DOCUMENTS
Dimensions
http://www.vishay.com/doc?95360