C&H Technology CM100DY-34A - Manual (Page 3)

CM100DY-34A
Dual IGBTMOD™ A-Series Module
100 Amperes/1700 Volts
2 01/10 Rev. 1
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
Absolute Maximum Ratings, Tj = 25°C unless otherwise specified
Ratings Symbol CM100DY-34A Units
Junction Temperature Tj –40 to 150 °C
Storage Temperature Tstg –40 to 125 °C
Collector-Emitter Voltage (G-E Short) VCES 1700 Volts
Gate-Emitter Voltage (C-E Short) VGES ±20 Volts
Collector Current (DC, TC = 108°C)* 4 IC 100 Amperes
Peak Collector Current (Pulse Repetition)* 2 ICM 200 Amperes
Maximum Collector Dissipation (TC = 25°C, Tj ≤ 150°C)* 2, * 4 PC 960 Watts
Emitter Current (TC = 25°C) IE* 1 100 Amperes
Peak Emitter Current (Pulse Repetition)* 2 IEM* 1 200 Amperes
Mounting Torque, M5 Main Terminal — 30 in-lb
Mounting Torque, M6 Mounting — 40 in-lb
Weight — 310 Grams
Isolation Voltage (Main Terminal to Baseplate, f = 60Hz, AC 1 min.) VISO 3500 Volts
Static Electrical Characteristics, Tj = 25°C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector-Cutoff Current ICES VCE = VCES, VGE = 0V — — 1.0 mA
Gate Leakage Current IGES VGE = VGES, VCE = 0V — — 2.0 µA
Gate-Emitter Threshold Voltage VGE(th) IC = 10mA, VCE = 10V 5.5 7.0 8.5 Volts
Collector-Emitter Saturation Voltage VCE(sat) IC = 100A, VGE = 15V, Tj = 25°C* 3 — 2.2 2.8 Volts
IC = 100A, VGE = 15V, Tj = 125°C* 3 — 2.45 — Volts
Total Gate Charge QG VCC = 1000V, IC = 100A, VGE = 15V — 670 — nC
Emitter-Collector Voltage VEC* 1 IE = 100A, VGE = 0V* 3 — — 3.0 Volts
Dynamic Electrical Characteristics, Tj = 25°C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Input Capacitance Cies — — 24.7 nf
Output Capacitance Coes VCE = 10V, VGE = 0V — — 2.8 nf
Reverse Transfer Capacitance Cres — — 0.53 nf
Inductive Turn-on Delay Time td(on) — — 200 ns
Load Rise Time tr VCC = 1000V, IC = 100A, — — 150 ns
Switch Turn-off Delay Time td(off) VGE1 = VGE2 = 15V, RG = 4.8Ω, — — 550 ns
Time Fall Time tf Inductive Load — — 350 ns
Diode Reverse Recovery Time trr* 1 Switching Operation, — — 300 ns
Diode Reverse Recovery Charge Qrr* 1 IE = 100A — 10 — µC
*1 Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
*2 Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating.
*3 Pulse width and repetition rate should be such as to cause negligible temperature rise.
*4 Case temperature (TC), and heatsink temperature (Tf) measured point is just under the chips.