Trek 1100TN Electrostatic Force Microscope - Manual (Page 2)

Features (cont.)
Three Measurement
Modes Static
Line Profile
3D Mapping
Video Camera For observing actual point of measurement
Note DC to bias voltage controlled by PC to surface
test available
Optical System
Laser Unit for
Detecting Cantilever
Distortion Laser Diode 670 nm with detector photodiode
Observation for
Actual Measurement
Point
Light Source Green LED
Camera CCD with 380k pixels
Object Lens 10X lens for 500 µm square under the monitor
camera
Optional Accessories
Photoreceptor Drum
Installation Holder Contact the factory for the Model Number
Laser System for
Exposure Contact the factory for the Model Number
Clean Booth Contact the factory for the Model Number
Additional Information
For additional information, please refer to
“A New Field Nullification Method for Electrostatic Force Microscope
(EFM) for Unknown High Voltage Measurement,”
a paper co-authored by Trek and Nihon University presented at the
Imaging Science & Technology's Digital Printing Technologies
Conference (IS&T/NIP27) on Wednesday, October 5, 2011 during NIP
Track 2 Photoelectronic Imaging Materials and Devices session,
in Minneapolis, Minnesota.
http://www.trekinc.com/pdf/EFMPaper.pdf
Model 1100TN Specifications
Performance
Measurement Range 0 to ±1 kV DC
Spatial Resolution
(Reference to input
voltage with comb-
shaped electrode 60% of signal strength for 10 µm width
70% of signal strength for 20 µm width
Separation between
Detector Tip and
Surface Under Test
(Controlled with piezo
stage in Z axis) Typically 5 µm
Accuracy Better than 0.5% of full scale
Voltage Sensitivity Better than 100 mV
Sampling Speed 30 ms to 0.1 ms per data sample
Scanning Area
X and Y Axis ±15 mm with 1 µm resolution
Z Axis Range 0 to 5 mm
Z Axis Piezo Stage
Range
0 to 80 µm with 1 m accuracy µ
Features
Detector (Computer Generated Image)
Copyright © 2012 TREK, INC. All specifications are subject to change. 1229/DEC
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