Rainbow Electronics MAX16915 - Manual (Page 3)

Ideal Diode, Reverse-Battery, and Overvoltage Protection
Switch/Limiter Controllers with External MOSFETs
MAX16914/MAX16915
_______________________________________________________________________________________ 3
ELECTRICAL CHARACTERISTICS (continued)
(V
CC
= 14V, C
GATE1
= 32nF, C
GATE2
= 32nF, SHDN = high, T
A
= -40NC to +125NC, unless otherwise noted. Typical
values are at T
A
= +25NC.) (Note 2)
Note 2: All parameters are production tested at T A
= +25NC. Limits over the operating temperature range are guaranteed by
design and characterization.
Note 3: Guaranteed by design and characterization.
Note 4: The back-charge voltage, V
BC , is defined as the voltage at SENSE OUT minus the voltage at SENSE IN.
Note 5: Defined as the time from when V BC exceeds V BCTH (25mV typ) to when V GATE1 exceeds V CC - 3.5V.
Note 6: Defined as the time from when V BC falls below V BCTH - 50mV to when V GATE1 falls below V CC - 3.5V.
Note 7: Defined as the time from when V SET exceeds V SETTH (1.20V typ) to when V GATE2 exceeds V CC - 3.5V.
Note 8: Defined as the time from when V SET falls below V SETTH - 5% (1.14V typ) to when V GATE2 falls below V CC - 3.5V.
Note 9: The external pFETs can turn on t START after the IC is powered up and all input conditions are valid.
Note 10: Defined as the time from when V CC exceeds the undervoltage-lockout threshold (4.3V max) to when V GATE1 and V GATE2
fall below 1V.
Note 11: Defined as the time from when V CC falls below V SENSE OUT - 25mV to when V GATE1 reaches V CC - 1.75V.
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
TERM On-Resistance R TERM SHDN = high 150 500 I
TERM Output Current I TERM SHDN = low, V TERM = 0V 1.0 F A
Back-Charge Voltage Fault
Threshold
V BCTH V SENSE OUT = 14V (Note 4) 18 25 32 mV
Back-Charge Voltage Threshold
Hysteresis
V BCHY V SENSE OUT = 14V 50 mV
Back-Charge Turn-Off Time
(GATE1)
t BC
V CC = 9.5V, V SENSE IN = 9V,
V SENSE OUT stepped from 4.9V to 9.5V
(Note 5)
6 10 F s
Back-Charge Recovery Time
(GATE1)
t BCREC
V CC = 9.5V, V SENSE IN = 9V,
V SENSE OUT stepped from 9.5V to 4.9V
(Note 6)
18 30 F s
GATE2 Turn-Off Time
V CC = 9.5V, V SET rising from 1V to
1.5V (Note 7)
3 F s
GATE2 Turn-On Time
V CC = 9.5V, V SET falling from 1.5V to
1V (Note 8)
20 F s
Startup Response Time
(V
SHDN Rising)
t START1
V
CC
= 9.5V, from V
SHDN
rising to
V GATE_ falling (Note 9)
100 F s
Startup Response Time
(V
CC Rising)
t START2
V CC rising from 2V to 4.5V, SHDN =
high (Note 10)
0.150 ms
Reverse-Battery Voltage Turn-Off
Time/UVLO Turn-Off Time
t
REVERSE
V CC and V SENSE IN falling from 4.25V
to 3.25V, V
SENSE OUT
= 4.25V
(Note 11)
30
F
s
Thermal-Shutdown Temperature +170
N
C
Thermal-Shutdown Hysteresis 20 N C
OV Output Low Voltage V OVBL I SINK = 600FA 0.4 V
OV Open-Drain Leakage Current I OVB V SET = 1.0V 1.0 F A
SENSE IN Input Current I SENSE IN V SHDN = 0/14V 1 5 F A
SENSE OUT Input Current I SENSE OUT V SHDN = 0/14V 2 5 F A
SET to OV Output Low
Propagation Delay
t OVBPD
V CC = 9.5V, V SET rising from 1V to
1.5V to V OV falling
3 F s