Rainbow Electronics TSM160N10 - Manual (Page 2)

TSM160N10
100V N-Channel Power MOSFET
2/6 Version: B13
Electrical Specifications (Ta = 25
o
C unless otherwise noted)
Parameter Conditions Symbol Min Typ Max Unit
Static
Drain-Source Breakdown Voltage V
GS
= 0V, I
D
= 250uA BV
DSS
100 -- -- V
Drain-Source On-State Resistance V
GS
= 10V, I
D
= 30A R
DS(ON)
-- 4.5 5.5 m Ω
Gate Threshold Voltage V
DS
= V
GS
, I
D
= 250uA V
GS(TH)
2 3 4 V
Zero Gate Voltage Drain Current V
DS
= 80V, V
GS
= 0V I
DSS
-- -- 1 uA
Gate Body Leakage V
GS
= ±20V, V
DS
= 0V I
GSS
-- -- ±100 nA
Dynamic
Total Gate Charge
V
DS
= 30V, I
D
= 30A,
V
GS
= 10V
Q
g
-- 154 --
nC Gate-Source Charge Q
gs
-- 35 --
Gate-Drain Charge Q
gd
-- 40 --
Input Capacitance
V
DS
= 30V, V
GS
= 0V,
f = 1.0MHz
C
iss
-- 8600 --
pF Output Capacitance C
oss
-- 780 --
Reverse Transfer Capacitance C
rss
-- 300 --
Switching
Turn-On Delay Time
V
GS
= 10V, V
DS
= 30V,
R
G
= 3.3 Ω
t
d(on)
-- 25 --
nS
Turn-On Rise Time t
r
-- 40 --
Turn-Off Delay Time t
d(off)
-- 85 --
Turn-Off Fall Time t
f
-- 45 --
Drain-Source Diode Characteristics and Maximum Rating
Drain-Source Diode Forward
Voltage
V
GS
=0V, I
S
=30A V
SD
-- 0.8 1.3 V
Reverse Recovery Time
I
S
= 30A, T
J
=25
o
C
dI/dt = 100A/us
t
fr
-- 120 -- nS
Reverse Recovery Charge Q
fr
-- 160 -- nC
Notes:
1. Pulse Test: Pulse Width
≤ 300 µ s, Duty Cycle ≤ 2%.
2. R θ
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal
reference is defined as the solder mounting surface of the drain pins. R θ
JC
is guaranteed by design while R θ
CA
is determined by the user's board design. R θ
JA
shown below for single device operation on FR-4 in still air