Rainbow Electronics TSM10N60 - Manual

TSM10N60
600V N-Channel MOSFET
1/9 Version: C13
TO-220 ITO-220 PRODUCT SUMMARY
V
DS
(V) R
DS(on)
( Ω )(max) I
D
(A)
600 0.75 @ V
GS
=10V 10
Features
● Advanced high dense cell design.
● High Power and Current handing capability.
Application
● Power Supply.
● Lighting.
Ordering Information
Part No. Package Packing
TSM10N60CZ C0 TO-220 50pcs / Tube
TSM10N60CI C0 ITO-220 50pcs / Tube
Absolute Maximum Rating (T
C
= 25
o
C unless otherwise noted)
Parameter Symbol
Limit
Unit
TO-220 ITO-220
Drain-Source Voltage V
DS
600 V
Gate-Source Voltage V
GS
±30 V
Continuous Drain Current
T
C
= 25
o
C
I
D
a
10
A
T
C
= 100
o
C 6
Pulsed Drain Current
b
I
DM
a
40 A
Total Power Dissipation @ T
C
=25C P
DTOT
166 50 W
Single Pulsed Avalanche Energy
c
E
AS
41 mJ
Operating Junction and Storage Temperature Range T
J
, T
STG
- 55 to +150
o
C
Thermal Performance
Parameter Symbol Limit Unit
Junction to Case Thermal Resistance R Ө
JC
0.75 2.5
o
C/W
Junction to Ambient Thermal Resistance R Ө
JA
63
o
C/W
Notes a: Current limited by package
Notes b: Pulse width limited by the Maximum junction temperature
Notes c: L=0.75mH, I
AS
=10A, V
DD
=50V, R
G
=25 Ω , Starting T
j
=25 ℃
Block Diagram
N-Channel MOSFET
Pin Definition:
1. Gate
2. Drain
3. Source