Electrical characteristics (continued) – Rainbow Electronics MAX5064 User Manual

Page 4

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MAX5062/MAX5063/MAX5064

125V/2A, High-Speed,
Half-Bridge MOSFET Drivers

4

_______________________________________________________________________________________

Note 1: All devices are 100% tested at T

A

= +125°C. Limits over temperature are guaranteed by design.

Note 2: Ensure that the V

DD

-to-GND or BST-to-HS voltage does not exceed 13.2V.

Note 3: Guaranteed by design, not production tested.
Note 4: Break-before-make time is calculated by t

BBM

= 8ns x (1 + R

BBM

/ 10k

Ω).

ELECTRICAL CHARACTERISTICS (continued)

(V

DD

= V

BST

= +8V to +12.6V, V

HS

= GND = 0V, BBM = open, T

A

= -40°C to +125°C, unless otherwise noted. Typical values are at

V

DD

= V

BST

= +12V and T

A

= +25°C.) (Note 1)

PARAMETER

SYMBOL

CONDITIONS

MIN

TYP

MAX

UNITS

SWITCHING CHARACTERISTICS FOR HIGH- AND LOW-SIDE DRIVERS

C

L

= 1000pF

7

C

L

= 5000pF

33

Rise Time

t

R

C

L

= 10,000pF

65

ns

C

L

= 1000pF

7

C

L

= 5000pF

33

Fall Time

t

F

C

L

= 10,000pF

65

ns

CMOS

30

55

Turn-On Propagation Delay Time

t

D_ON

Figure 1, C

L

= 1000pF

(Note 3)

TTL

35

63

ns

CMOS

30

55

Turn-Off Propagation Delay Time

t

D_OFF

Figure 1, C

L

= 1000pF

(Note 3)

TTL

35

63

ns

Delay Matching Between
Inverting Input to Output and
Noninverting Input to Output

t

MATCH1

C

L

= 1000pF, BBM open for MAX5064,

Figure 1 (Note 3)

2

8

ns

Delay Matching Between Driver-
Low and Driver-High

t

MATCH2

C

L

= 1000pF, BBM open for MAX5064,

Figure 1 (Note 3)

2

8

ns

R

BBM

= 10k

16

R

BBM

= 47k

Ω (Notes 3, 4)

40

56

72

Break-Before-Make Accuracy
(MAX5064 Only)

R

BBM

= 100k

95

ns

Internal Nonoverlap

1

ns

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