Rainbow Electronics TSM10N80 - Manual

TSM10N80
800V N-Channel Power MOSFET
1/10 Version: A12
TO-220 ITO-220 PRODUCT SUMMARY
V
DS
(V) R
DS(on)
( Ω ) I
D
(A)
800 1.05 @ V
GS
=10V 9.5
General Description
The TSM10N80 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS
technology. This advanced technology has been especially tailored to minimize on-state resistance, provide
superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency switch mode power supply, power factor correction, electronic
lamp ballast based on half bridge.
Features
● Low R
DS(ON)
1.05 Ω (Max.)
● Low gate charge typical @ 53nC (Typ.)
● Improve dv/dt capability
Block Diagram
N-Channel MOSFET
Ordering Information
Part No. Package Packing
TSM10N80CZ C0 TO-220 50pcs / Tube
TSM10N80CI C0 ITO-220 50pc / Tube
Absolute Maximum Rating (Ta = 25
o
C unless otherwise noted)
Parameter Symbol Limit Unit
Drain-Source Voltage V
DS
800 V
Gate-Source Voltage V
GS
±30 V
Continuous Drain Current I
D
9.5 A
Pulsed Drain Current * I
DM
38 A
Peak Diode Recovery dv/dt (Note 3) dv/dt 4.5 V
Single Pulse Avalanche Energy (Note 2) E
AS
917 mJ
Avalanche Current (Repetitive) (Note 1) I
AR
9.5 A
Repetitive Avalanche Energy (Note 1) E
AR
29 mJ
Operating Junction Temperature T
J
150 ºC
Storage Temperature Range T
STG
-55 to +150
o
C
* Limited by maximum junction temperature
Pin Definition:
1. Gate
2. Drain
3. Source