Rainbow Electronics TSM10P06 - Manual

TSM10P06
60V P-Channel MOSFET
1/4 Version: B13
TO-252
(DPAK)
PRODUCT SUMMARY
V
DS
(V) R
DSON
(m Ω ) I
D
(A)
-60
170 @ V
GS
= -10V -5
220 @ V
GS
= -4.5V -2
Features
● Advance Trench Process Technology
● High Density Cell Design for Ultra Low On-resistance
Application
● Load Switch
● PA Switch
Ordering Information
Part No. Package Packing
TSM10P06CP ROG TO-252 2.5Kpcs / 13” Reel
Note: “G” denote for Halogen Free Product
Absolute Maximum Rating (T
A
= 25
o
C unless otherwise noted)
Parameter Symbol Limit Unit
Drain-Source Voltage V
DS
-60 V
Gate-Source Voltage V
GS
±20 V
Continuous Drain Current I
D
-10 A
Pulsed Drain Current I
DM
-20 A
Continuous Source Current (Diode Conduction)
a,b
I
S
-10 A
Single Pulse Avalanche Energy (Note 2) E
AS
5 mJ
Avalanche Current I
AS
-10 A
Total Power Dissipation @ T
C
=25C P
DTOT
37 W
Operating Junction Temperature T
J
+150
o
C
Operating Junction and Storage Temperature Range T
J
, T
STG
- 55 to +150
o
C
Thermal Performance
Parameter Symbol Limit Unit
Junction to Case Thermal Resistance R Ө
JC
4
o
C/W
Junction to Ambient Thermal Resistance (PCB mounted) R Ө
JA
70
o
C/W
Notes:
a. Pulse width limited by the Maximum junction temperature
b. Surface Mounted on FR4 Board, t ≤ 10 sec.
Block Diagram
P-Channel MOSFET
Pin Definition:
1. Gate
2. Drain
3. Source