Rainbow Electronics TSM20N50 - Manual

TSM20N50
500V N-Channel Power MOSFET
1/10 Version: A12
TO-220 ITO-220 PRODUCT SUMMARY
V
DS
(V) R
DS(on)
( Ω ) I
D
(A)
500 0.3 @ V
GS
=10V 18
General Description
The TSM20N50 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS
technology. This advanced technology has been especially tailored to minimize on-state resistance, provide
superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency switch mode power supply, electronic lamp ballast based on half
bridge.
Features
● Low R
DS(ON)
0.3 Ω (Max.)
● Low gate charge typical @ 54nC (Typ.)
● Improve dv/dt capability
Block Diagram
N-Channel MOSFET
Ordering Information
Part No. Package Packing
TSM20N50CZ C0 TO-220 50pcs / Tube
TSM20N50CI C0 ITO-220 50pcs / Tube
Absolute Maximum Rating (Ta = 25
o
C unless otherwise noted)
Parameter Symbol Limit Unit
Drain-Source Voltage V
DS
500 V
Gate-Source Voltage V
GS
±30 V
Continuous Drain Current(T
C
=25 ) ℃ I
D
18 A
Pulsed Drain Current * I
DM
72 A
Peak Diode Recovery dv/dt (Note 3) dv/dt 4.5 V/ns
Single Pulse Avalanche Energy (Note 2) E
AS
954 mJ
Avalanche Current (Repetitive) (Note 1) I
AR
18 A
Repetitive Avalanche Energy (Note 1) E
AR
29 mJ
Operating Junction Temperature T
J
150 ºC
Storage Temperature Range T
STG
-55 to +150
o
C
* Limited by maximum junction temperature
Pin Definition:
1. Gate
2. Drain
3. Source