Rainbow Electronics AT45DB161D - Manual (Page 4)

4
3500O–DFLASH–11/2012
AT45DB161D
3. Block Diagram
4. Memory Array
To provide optimal flexibility, the memory array of the AT45DB161D is divided into three levels of granularity
comprising of sectors, blocks, and pages. The “Memory Architecture Diagram” illustrates the breakdown of each
level and details the number of pages per sector and block. All program operations to the DataFlash occur on a
page by page basis. The erase operations can be performed at the chip, sector, block or page level.
Figure 4-1. Memory Architecture Diagram
FLASH MEMORY ARRAY
PAGE (512-/528-BYTES)
BUFFER 2 (512-/528-BYTES) BUFFER 1 (512-/528-BYTES)
I/O INTERFACE
SCK
CS
RESET
VCC
GND
RDY/BUSY
WP
SO SI
SECTOR 0a = 8 Pages
4,096-/4,224-bytes
SECTOR 0b = 248 Pages
126,976-/130,944-bytes
Block = 4,096-/4,224-bytes
8 Pages SECTOR 0
SECT
OR 1
Page = 512-/528-bytes
PAGE 0
PAGE 1
PAGE 6
PAGE 7
PAGE 8
PAGE 9
PAGE 4,094
PAGE 4,095
BLOCK 0
PAGE 14
PAGE 15
PAGE 16
PAGE 17
PAGE 18
BLOCK 1
SECTOR ARCHITECTURE BLOCK ARCHITECTURE PAGE ARCHITECTURE
BLOCK 0
BLOCK 1
BLOCK 30
BLOCK 31
BLOCK 32
BLOCK 33
BLOCK 510
BLOCK 511
BLOCK 62
BLOCK 63
BLOCK 64
BLOCK 65
SECT
OR 2
SECTOR 15 = 256 Pages
131,072-/135,168-bytes
BLOCK 2
SECTOR 1 = 256 Pages
131,072-/135,168-bytes
SECTOR 14 = 256 Pages
131,072-/135,168-bytes
SECTOR 2 = 256 Pages
131,072-/135,168-bytes