Rainbow Electronics ATA5577 - Manual (Page 6)

6
4967DS–RFID–10/08
ATA5577 [Preliminary]
6. Electrical Characteristics
T
amb
= +25°C; f
coil
= 125 kHz; unless otherwise specified
No. Parameters Test Conditions Symbol Min. Typ. Max. Unit Type*
1 RF frequency range f
RF
100 125 150 kHz
2.1
Supply current (without
current consumed by the
external LC tank circuit)
T
amb
= 25°C (1)
I
DD
1.5 TBD µA T
2.2
Read - full temperature
range
2 TBD µA Q
2.3
Programming - full
temperature range
25 TBD µA Q
3.1
Coil voltage (AC supply)
POR threshold (50-mV
hysteresis)
V
coil pp
TBD 3.6 TBD V Q
3.2
Read mode and write
command
(2)
6 V
clamp
V Q
3.3 Program EEPROM (2) 8 V
clamp
V Q
4 Start-up time V
coil pp
= 6V t
startup
2.5 TBD ms Q
5.1
Clamp voltage (depends
on settings in option
register)
3-mA current into
Coil1/Coil2
V
pp clamp lo
TBD 11 TBD V Q
5.2 V
pp clamp med
TBD 13 TBD V Q
5.3 V
pp clamp hi
TBD 17 TBD V T
5.4
20-mA current into
Coil1/Coil2
V
pp clamp med
TBD 15 TBD V T
6.1
Modulation parameters
(depends on settings in
option register)
3-mA current into
Coil1/Coil2 and
modulation ON
V
pp mod lo
TBD 3 TBD V T
6.2 V
pp mod med
TBD 5 TBD V Q
6.3 V
pp mod hi
TBD 7 TBD V Q
6.4
20 mA current into
Coil1/Coil2 and
modulation ON
V
pp mod med
TBD 7.5 TBD V T
6.5 Thermal stability V
mod lo
/T
amb
–1 mV/°C Q
7.1
Clock detection level
(depends on settings in
option register)
V
coil pp
= 8V
V
clkdet lo
TBD 250 TBD mV Q
7.2 V
clkdet med
TBD 550 TBD mV T
7.3 V
clkdet hi
TBD 800 TBD mV Q
7.4
Gap detection level
(depends on settings in
option register)
V
coil pp
= 8 V
V
gapdet lo
TBD 250 TBD mV Q
7.5 V
gapdet med
TBD 550 TBD mV T
7.6 V
gapdet hi
TBD 850 TBD mV Q
8 Programming time
From last command gap
to re-enter read mode
(64 + 648 internal
clocks)
T
prog
5 5.7 6 ms T
9 Endurance Erase all/Write all (3) n
cycle
100000 Cycles Q
*) Type means: T: directly or indirectly tested during production; Q: guaranteed based on initial product qualification data
Notes: 1. I
DD
measurement set-up R = 100k
Ω
; V
CLK
= V
coil
= 3V: EEPROM programmed to 00 ... 000 (erase all); chip in modulation
defeat. I
DD
= (V
OUTmax
– V
CLK
) / R
2. Current into Coil1/Coil2 is limited to 10 mA.
3. Since EEPROM performance is influenced by assembly processes, Atmel confirms the parameters for DOW (tested die on
uncut wafer) delivery.