Rainbow Electronics AT45DB321D - Manual (Page 28)

28
3597J–DFLASH–4/08
AT45DB321D
Group D commands consist of:
1. Erase Sector Protection Register
2. Program Sector Protection Register
3. Sector Lockdown
4. Program Security Register
If a Group A command is in progress (not fully completed), then another command in Group A,
B, C, or D should not be started. However, during the internally self-timed portion of Group B
commands, any command in Group C can be executed. The Group B commands using buffer 1
should use Group C commands using buffer 2 and vice versa. Finally, during the internally self-
timed portion of a Group D command, only the Status Register Read command should be
executed.
15. Command Tables
Table 15-1. Read Commands
Command Opcode
Main Memory Page Read D2H
Continuous Array Read (Legacy Command) E8H
Continuous Array Read (Low Frequency) 03H
Continuous Array Read (High Frequency) 0BH
Buffer 1 Read (Low Frequency) D1H
Buffer 2 Read (Low Frequency) D3H
Buffer 1 Read D4H
Buffer 2 Read D6H
Table 15-2. Program and Erase Commands
Command Opcode
Buffer 1 Write 84H
Buffer 2 Write 87H
Buffer 1 to Main Memory Page Program with Built-in Erase 83H
Buffer 2 to Main Memory Page Program with Built-in Erase 86H
Buffer 1 to Main Memory Page Program without Built-in Erase 88H
Buffer 2 to Main Memory Page Program without Built-in Erase 89H
Page Erase 81H
Block Erase 50H
Sector Erase 7CH
Chip Erase C7H, 94H, 80H, 9AH
Main Memory Page Program Through Buffer 1 82H
Main Memory Page Program Through Buffer 2 85H