Rainbow Electronics AT29BV020 - Manual

1
Features
• Single Supply Voltage, Range 2.7V to 3.6V
• Single Supply for Read and Write
• Software Protected Programming
• Fast Read Access Time - 120 ns
• Low Power Dissipation
– 15 mA Active Current
– 40 µA CMOS Standby Current
• Sector Program Operation
– Single Cycle Reprogram (Erase and Program)
– 1024 Sectors (256 Bytes/Sector)
– Internal Address and Data Latches for 256 Bytes
• Two 8K Bytes Boot Blocks with Lockout
• Fast Sector Program Cycle Time – 20 ms Max.
• Internal Program Control and Timer
• DATA Polling for End of Program Detection
• Typical Endurance > 10,000 Cycles
• CMOS and TTL Compatible Inputs and Outputs
• Commercial and Industrial Temperature Ranges
Description
The AT29BV020 is a 2.7-volt-only in-system Flash Programmable and Erasable Read
Only Memory (PEROM). Its 2 megabits of memory is organized as 262,144 words by
8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS EEPROM technology,
the device offers access times to 120 ns, and a low 54 mW power dissipation. When
the device is deselected, the CMOS standby current is less than 40
µA. The device
endurance is such that any sector can typically be written to in excess of 10,000 times.
The programming algorithm is compatible with other devices in Atmel’s Low Voltage
Flash family of products.
2-megabit
(256K x 8)
Single 2.7-volt
Battery-Voltage
™
Flash Memory
AT29BV020
Rev. 0402D–FLASH–05/02
PLCC Top View
Pin Configurations
Pin Name Function
A0 - A17 Addresses
CE Chip Enable
OE Output Enable
WE Write Enable
I/O0 - I/O7 Data Inputs/Outputs
NC No Connect
5
6
7
8
9
10
11
12
13
29
28
27
26
25
24
23
22
21
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
A14
A13
A8
A9
A11
OE
A10
CE
I/O7
4 3 2 1
32 31 30
14 15 16 17 18 19 20
I/O1 I/O2 GND I/O3 I/O4 I/O5 I/O6
A12 A15 A16 NC VCC WE A17
TSOP Top View
Type 1
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
A11
A9
A8
A13
A14
A17
WE
VCC
NC
A16
A15
A12
A7
A6
A5
A4
OE
A10
CE
I/O7
I/O6
I/O5
I/O4
I/O3
GND
I/O2
I/O1
I/O0
A0
A1
A2
A3