Electrical specifications, Austin lynx, Continued) – GE Industrial Solutions Austin Lynx II SIP User Manual

Page 3

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Data Sheet
October 2, 2009

Austin Lynx

TM

II SIP Non-isolated Power Modules:

2.4 – 5.5Vdc input; 0.75Vdc to 3.63Vdc Output; 10A output current


LINEAGE

POWER

3

Electrical Specifications

(continued)

Parameter

Device

Symbol

Min

Typ

Max

Unit

Output Voltage Set-point

All

V

O, set

-2.0 V

O, set

+2.0 %

V

O, set

(V

IN

=

IN, min

, I

O

=I

O, max

, T

A

=25°C)

Output Voltage

All

V

O, set

-3%

+3% %

V

O, set

(Over all operating input voltage, resistive load,
and temperature conditions until end of life)

Adjustment Range

All

V

O

0.7525 3.63 Vdc

Selected by an external resistor

Output Regulation

Line (V

IN

=V

IN, min

to V

IN, max

) All

0.3

% V

O, set

Load (I

O

=I

O, min

to I

O, max

) All

0.4

% V

O, set

Temperature (T

ref

=T

A, min

to T

A, max

) All

0.4

% V

O, set

Output Ripple and Noise on nominal output

(V

IN

=V

IN, nom

and I

O

=I

O, min

to I

O, max

Cout = 1μF ceramic//10μFtantalum capacitors)

RMS (5Hz to 20MHz bandwidth)

All

8 15

mV

rms

Peak-to-Peak (5Hz to 20MHz bandwidth)

All

25 50

mV

pk-pk

External Capacitance

ESR ≥ 1 mΩ All

C

O, max

1000

μF

ESR ≥ 10 mΩ All

C

O, max

5000

μF

Output Current

All

I

o

0 10

Adc

Output Current Limit Inception (Hiccup Mode )

All

I

O, lim

200

% I

o

(V

O

= 90% of V

O, set

)

Output Short-Circuit Current

All

I

O, s/c

3.0

Adc

(V

O

≤250mV) ( Hiccup Mode )

Efficiency V

O,set

= 0.75Vdc

η

82.5

%

V

IN

= V

IN, nom

, T

A

=25°C V

O, set

= 1.2Vdc

η

88.0

%

I

O

=I

O, max ,

V

O

= V

O,set

V

O,set

= 1.5Vdc

η

89.5

%

V

O,set

= 1.8Vdc

η

91.0

%

V

O,set

= 2.5Vdc

η

93.0

%

V

O,set

= 3.3Vdc

η

95.0

%

Switching Frequency

All

f

sw

300

kHz

Dynamic Load Response

(dIo/dt=2.5A/

μs; V

IN

= V

IN, nom

; T

A

=25°C)

All V

pk

200

mV

Load Change from Io= 50% to 100% of
Io,max; 1μF ceramic// 10 μF tantalum

Peak Deviation

Settling Time (Vo<10% peak deviation)

All t

s

25

μs

(dIo/dt=2.5A/

μs; V

IN

= V

IN, nom

; T

A

=25°C)

All V

pk

200

mV

Load Change from Io= 100% to 50%of Io,max:
1μF ceramic// 10 μF tantalum

Peak Deviation

Settling Time (Vo<10% peak deviation)

All t

s

25

μs

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