Diodes SBR1045CTLQ - Manual (Page 2)

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SBR1045CTLQ
Document number: DS36094 Rev. 1 - 2
2 of 6
www.diodes.com
October 2012
© Diodes Incorporated
SBR1045CTLQ
NEW PROD
UC
T
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitance load, derate current by 20%.
Characteristic Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage V
RRM
V
RWM
V
RM
45 V
RMS Reverse Voltage V
R(RMS)
31 V
Average Rectified Output Current @T
C
= +110ºC I
O
10 A
Non-Repetitive Peak Forward Surge Current 8.3ms
Single Half Sine-Wave Superimposed on Rated Load
I
FSM
90 A
Repettitive Peak Avalanche Power (1μs, +25 ºC) P
ARM
10000 W
Non-Repetitive Avalanche Energy
(T
J
= +25°C, I
AS
= 6A, L = 8.5mH)
E
AS
200 mJ
Thermal Characteristics
Characteristic Symbol Value Unit
Maximum Thermal Resistance (per leg) (Note 5) R
θJA
47 ºC/W
Operating and Storage Temperature Range T
J
, T
STG
-65 to +150 ºC
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
Forward Voltage Drop (Per Leg) V
F
- - 0.55 V I
F
= 5A, T
J
= +25ºC
Leakage Current (Note 6) I
R
-
-
13
0.3
50
mA
V
R
= 45V, T
J
= +25ºC
V
R
= 45V, T
J
= +125ºC
Notes: 5. Device mounted on polymide substrate 2” x 2”, 2oz. Copper, 1 x MRP double-sided, PC boards.
6. Short duration pulse test used to minimize self-heating effect.
Figure 1 Forward Power Dissipation
0
1
2
3
0 1 2 3 4 5 6
I , AVERAGE FORWARD CURRENT (A)
F(AV)
P
,
P
O
WE
R
DISS
IP
A
T
IO
N
(W
)
D
Figure 2 Typical Forward Characteristics
0.0001
0.001
0.01
0.1
1
10
100
0 0.2 0.4 0.6 0.8 1
V , INSTANTANEOUS FORWARD VOLTAGE (V)
F
I
,
INST
ANT
A
NEOUS F
O
R
W
A
RD CURRENT
(
A
)
F
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A