Diodes SBR20A60CTQ - Manual (Page 3)

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SBR20A60CTBQ
Document number: DS36363 Rev. 1 - 2
3 of 5
www.diodes.com
July 2013
© Diodes Incorporated
SBR20A60CTQ
1
100
10,000
T = +25°C
A
T = +85°C
A
T = +125°C
A
T = +150°C
A
0 10 20 30 40 50 60
V , INSTANTANEOUS REVERSE VOLTAGE (V)
F
Figure 3 Typical Reverse Characteristics
I
, INS
T
AN
T
ANE
O
U
S
R
EVE
R
SE
C
U
R
R
EN
T
(µ
A
)
F
0 10 20 30 40 50 60
V , DC REVERSE VOLTAGE (V)
R
Figure 4 Total Capacitance vs. Reverse Voltage
10
100
1,000
10,000
C
,
T
O
T
AL
C
A
P
A
C
IT
A
N
C
E (
p
F
)
T
f = 1MHz
25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
A
Figure 5 Forward Current Derating Curve
I,
D
C
F
O
R
WA
R
D
C
U
R
R
E
N
T
(A
)
F
12
10
8
6
4
2
0
I (A) with heatsink
F
I (A) with heatsink
F
100,000
10,000
1,000
100
10
1
P
, M
AXI
M
U
M A
V
AL
A
N
C
H
E
P
O
WE
R
(W
)
AR
M
0.01 0.1 1 10 100 1,000
T , PULSE DURATION (µS)
P
Figure 6 Maximum Avalanche Power Curve
P
,
P
EAK
T
R
ANSI
EN
T
P
O
WE
R
(W
)
(PK)
t1, PULSE DURATION TIME (sec)
Figure 7 Single Pulse Maximum Power Dissipation
1200
0.1
1000
800
600
400
200
0
Single Pulse
R
= 50°C/W JA
R = r *R
T - T = P*R
 

JA(t) (t) JA
J A JA(t)
0.001 0.00001 10 1000