Diodes ZXT951K - Manual (Page 4)

ZXT951K
Document number: DS33642 Rev. 3 - 2
4 of 7
www.diodes.com
August 2012
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXT951K
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ. Max Unit Test Condition
Collector-Base Breakdown Voltage BV CBO
-100 -125 - V I
C = -100µA
Collector-Base Breakdown Voltage BV
CER
-100 -125 - V I
C
= -100µA, R
BE
≤1kΩ
Collector-Emitter Breakdown Voltage (Note 9) BV
CEO
-60 -80 - V I
C
= -10mA
Emitter-Base Breakdown Voltage BV EBO
-7 -8.1 - V I E = -100µA
Collector Cutoff Current I
CBO
- <1 -20 nA V
CB
= -80V
Emitter Cutoff Current I
EBO
- <1 -10 nA V
EB
= -6V
Emitter Cutoff Current I CER
- <1 -20 nA V
CE
= -80V, R
BE
≤1kΩ
DC current transfer Static ratio (Note 9) h
FE
100
100
50
15
230
200
110
40
-
300
-
-
-
I
C
= -10mA, V
CE
= -1V
I
C
= -2A, V
CE
= -1V
I
C
= -6A, V
CE
= -1V
I
C
= -10A, V
CE
= -1V
Collector-Emitter Saturation Voltage (Note 9) V CE(sat)
-
-
-
- -13
-60
-115
-315
-25
-90
-165
-400
mV
I
C
= -0.1A, I
B
= -10mA
I C = -1A, I B = -100mA
I
C
= -2A, I
B
= -200mA
I
C
= -6A, I
B
= -600mA
Base-Emitter Saturation Voltage (Note 9) V
BE(sat)
- -1.05 -1.2 V I
C
= -6A, I
B
= -600mA
Base-Emitter Turn-on Voltage (Note 9) V BE(on)
- -0.92 -1.05 V I C = -6A, V CE = -1V
Transitional Frequency f
T
- 120 - MHz
I
C
= -100mA, V
CE
= -10V
f = 50MHz
Output capacitance C
OBO
- 74 - pF V
CB
= -10V, f = 1MHz,
Switching times
t
ON
t OFF
-
82
350
- nS
I
C
= -2A, V
CC
= -10V,
I
B1
= I
B2
= -200mA
Notes: 9. Measured under pulsed conditions. Pulse width ≤ 300μs. Duty cycle ≤2%.