Capacitance v voltage, Zxtn4004z, Electrical characteristics – Diodes ZXTN4004Z User Manual
Page 3: Ty p ic a l ga in ( h, Collector current (a), V ) i, Capa c it anc e (pf ) voltage(v)
ZXTN4004Z
Document Number: DS35457 Rev: 1 - 2
3 of 5
December 2011
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXTN4004Z
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol
Min
Typ
Max
Unit
Test
Condition
Collector-Emitter Breakdown Voltage (Note 6)
BV
CEO
150 175 -
V I
C
= 10mA
Collector Cut-off Current
I
CBO
- - 50 nA
V
CB
= 150V
Emitter Cut-off Current
I
EBO
- - 50 nA
V
EB
= 7V
Static Forward Current Transfer Ratio (Note 6)
h
FE
60
100
-
-
-
-
-
I
C
= 85mA, V
CE
= 0.20V
I
C
= 150mA, V
CE
= 0.25V
Base-Emitter Turn-On Voltage (Note 6)
V
BE(on)
- 0.71
0.95 V
I
C
= 150mA, V
CE
= 0.25V
Delay Time
t
(d)
- 512 - ns
V
CC
= 120V, I
C
= 150mA,
-I
B2
= 1.5mA, V
CE
(
ON
) = 0.25V
Rise Time
t
(r)
- 426 -
ns
Storage Time
t
(s)
- 3413 -
ns
Fall Time
t
(f)
- 321 - ns
Storage Time
t
(s)
- 65 - ns
V
CC
= 120V, I
C
= 150mA,
-I
B2
= 1.5mA, V
CE
(
ON
) = 4V
Fall Time
t
(f)
- 294 - ns
Notes:
6. Measured under pulsed conditions. Pulse width = 300µs. Duty cycle
≤ 2%
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
100µ
1m
10m
100m
1
0
100
200
300
400
500
600
700
100µ
1m
10m
100m
1
0.2
0.4
0.6
0.8
1.0
100m
1
10
100
0
5
10
15
20
25
30
Ty
p
ic
a
l Ga
in
(
h
FE
)
125°C
h
FE
v I
C
V
CE
=0.25V
-55°C
25°C
85°C
I
C
Collector Current (A)
125°C
V
BE(on)
v I
C
V
CE
=0.25V
85°C
25°C
-55°C
V
B
E
(on)
(V
)
I
C
Collector Current (A)
Capacitance v Voltage
f = 1MHz
Cobo
Capa
c
it
anc
e (pF
)
Voltage(V)