Diodes ZXGD3004E6 - Manual (Page 4)

ZXGD3004E6
Issue 1 - October 2007 4 www.zetex.com
© Zetex Semiconductors plc 2007
Electrical characteristics (at Tamb = 25°C unless otherwise stated).
Switching time test circuits Timing diagram
Parameter Symbol Min. Typ. Max. Unit Conditions
Output voltage, high V
OH
V
IN1
– 0.4 V I
source
= 1
␮A
Output voltage, low V
OL
V
IN1
+ 0.4 V I
sink
= 1 ␮A
Source output leakage
current I
L(source)
1
␮A
V
CC
= 40V,
V
IN1
= V
IN2
= 0V
Sink output leakage
current I
L(sink)
1
␮A
V
CC
= 40V,
V
IN1
= V
IN2
= V
CC
Quiescent current I
Q
50 nA V
CC
= 32V,
V
IN1
= V
IN2
= 0V
Source output current I
(source)
1.2 1.9 A I
IN1
+I
IN2
= 10mA
Sink output current I
(sink)
1.2 1.9 A I
IN1
+I
IN2
= 10mA
Source output current I
(source)PK
8 A I
IN1
+I
IN2
= 1A
Sink output current I
(sink)PK
8 A I
IN1
+I
IN2
= 1A
Gate driver
switching times t
d(rise)
t
r
t
d(fall)
t
f
1.1
13.4
0.95
12.4
ns
ns
ns
ns
C
L
=1.5nF, R
L
=0.1
⍀,
V
CC
=15V, V
IN
=12.5V,
R
S
=25
⍀
Gate driver
switching times t
d(rise)
t
r
t
d(fall)
t
f
3.2
77.9
3.6
82
ns
ns
ns
ns
C
L
=1.5nF, R
L
=0.1
⍀,
V
CC
=15V, V
IN
=12.5V,
R
S
=1k
⍀