Diodes ZXMN2B03E6 - Manual (Page 4)

ZXMN2B03E6
Issue 1 - September 2006 4 www.zetex.com
© Zetex Semiconductors plc 2006
Electrical characteristics (at T
amb
= 25°C unless otherwise stated)
Parameter Symbol Min. Typ. Max. Unit Conditions
Static
Drain-source breakdown voltage V
(BR)DSS
20 V I
D
= 250
␮A, V
GS
=0V
Zero gate voltage drain current I
DSS
1 ␮A V
DS
= 20V, V
GS
=0V
Gate-body leakage I
GSS
100 nA V
GS
=±8V, V
DS
=0V
Gate-source threshold voltage V
GS(th)
0.4 1.0 V I
D
= 250
␮A, V
DS
=V
GS
Static drain-source on-state
resistance (*)
NOTES:
(*) Measured under pulsed conditions. Pulse width Յ300␮s; duty cycle Յ2%.
R
DS(on)
0.040 ⍀ V
GS
= 4.5V, I
D
= 4.3A
0.055
⍀
V
GS
= 2.5V, I
D
= 3.7A
0.075 ⍀ V
GS
= 1.8V, I
D
= 3.2A
Forward transconductance (*) (‡) g
fs
13.5 S V
DS
= 10V, I
D
= 4.3A
Dynamic (‡)
Input capacitance C
iss
1160 pF V
DS
= 10V, V
GS
=0V
f=1MHz
Output capacitance C
oss
210 pF
Reverse transfer capacitance C
rss
136 pF
Switching (†) (‡)
(†) Switching characteristics are independent of operating junction temperature.
(‡) For design aid only, not subject to production testing.
Turn-on-delay time t
d(on)
4.2 ns V
DD
= 10V, V
GS
= 4.5V
I
D
= 1A
R
G
≈
6.0 ⍀
Rise time t
r
6.2 ns
Turn-off delay time t
d(off)
33.9 ns
Fall time t
f
12.4 ns
Total gate charge Q
g
14.5 nC V
DS
= 10V, V
GS
= 4.5V
I
D
= 4.3A
Gate-source charge Q
gs
2 nC
Gate drain charge Q
gd
2.8 nC
Source-drain diode
Diode forward voltage (*) V
SD
0.67 0.95 V T
j
=25°C, I
S
= 1.8A,
V
GS
=0V
Reverse recovery time (‡) t
rr
10.8 ns T
j
=25°C, I
F
= 2.8A,
di/dt=100A/
␮s
Reverse recovery charge (‡) Q
rr
3.4 nC