Diodes VN10LF - Manual

SOT23 N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 2 – JANUARY 1996
FEATURES
* 60 Volt V
DS
* R
DS(on)
=5 Ω
PARTMARKING DETAIL – MY
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Drain-Source Voltage V
DS
60 V
Continuous Drain Current at T amb = 25°C I D 150 mA
Pulsed Drain Current I
DM
3 A
Gate Source Voltage V GS
± 20 V
Power Dissipation at T
amb
= 25°C P
tot
330 mW
Operating and Storage Temperature Range T
j
:T
stg
-55 to +150 °C
ELECTRICAL CHARACTERISTICS (at T amb = 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Drain-Source
Breakdown Voltage BV
DSS
60 V I
D
=100 µ A, V
GS
=0V
Gate-Source
Breakdown Voltage V
GS(th)
0.8 2.5 V I
D
=1mA, V
DS
= V
GS
Gate Body Leakage I GSS 100 nA V
GS
= ± 20V, V
DS
=0V
Zero Gate Voltage
Drain Current (1) I
DSS
10 µ A V
DS
=60 V, V
GS
=0V
On State Drain
Current(1) I
D(on)
750 mA V
DS
=15 V, V
GS
=10V
Static Drain Source On
State Resistance (1) R
DS(on)
5.0
7.5 Ω
Ω
V
GS
=10V, I
D
=500mA
V
GS
=5V, I
D
=200mA
Forward
Transconductance
(1)(2) g
fs
100 mS V
DS
=15V, I
D
=500mA
Input Capacitance (2) C
iss
60 pF
Common Source
Output Capacitance (2) C
oss
25 pF V
DS
=25 V, V
GS
=0V
f=1MHz
Reverse Transfer
Capacitance (2) C
rss
5 pF
Turn-On Time (2)(3) t
(on)
3 10 ns
V
DD
≈ 15V, I
D
=600mA
Turn-Off Time (2)(3) t (off) 4 10 ns
(1) Measured under pulsed conditions. Width=300 µ s. Duty cycle ≤ 2% (2) Sample test.
(3) Switching times measured with 50 Ω source impedance and <5ns rise time on a pulse generator
Spice parameter data is available upon request for this device
For typical characteristics graphs see ZVN3306F datasheet.
VN10LF
D
G
S
3 - 308