Diodes ZXMP6A13G - Manual (Page 4)

ZXMP6A13G
Document Number DS32032 Rev. 5 - 2
4 of 8
www.diodes.com
November 2011
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXMP6A13G
ADVAN
CE I
N
F
O
RM
ATI
O
N
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
-60 ⎯ ⎯ V I
D
= -250 μA, V
GS
= 0V
Zero Gate Voltage Drain Current I
DSS
⎯ ⎯ -0.5 μA V
DS
= -60V, V
GS
= 0V
Gate-Source Leakage I
GSS
⎯ ⎯ ±100 nA V
GS
=
±20V, V
DS
= 0V
ON CHARACTERISTICS
Gate Threshold Voltage
V GS(th)
-1.0 ⎯ -3.0 V I D = -250
μA, V
DS = V GS
Static Drain-Source On-Resistance (Note 8) R DS (ON)
⎯ ⎯
0.390
Ω
V
GS
= -10V, I
D
= -0.9A
0.595 V
GS
= -4.5V, I
D
= -0.8A
Forward Transconductance (Notes 8 & 9) g fs
⎯ 1.8 ⎯ S V DS = -15V, I D = -0.9A
Diode Forward Voltage (Note 8) V
SD
⎯ -0.85 -0.95 V I
S
= -0.8A, V
GS
= 0V, T
J
= 25°C
Reverse recovery time (Note 9) t
rr
21.1 ⎯ ns I S = -0.9A, di/dt = 100A/
μs,
T
J
= 25°C Reverse recovery charge (Note 9) Q
rr
⎯ 19.3 ⎯ nC
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
C
iss
⎯ 219 ⎯ pF
V
DS
= -30V, V
GS
= 0V
f = 1MHz
Output Capacitance C
oss
⎯ 25.7 ⎯ pF
Reverse Transfer Capacitance C
rss
⎯ 20.5 ⎯ pF
Total Gate Charge (Note 10) Q
g
⎯ 2.9 ⎯ nC V
GS
= -4.5V
V
DS
= -30V
I
D
= -0.9A
Total Gate Charge (Note 10) Q
g
⎯ 5.9 ⎯ nC
V GS = -10V Gate-Source Charge (Note 10) Q gs
⎯ 0.74 ⎯ nC
Gate-Drain Charge (Note 10) Q
gd
⎯ 1.5 ⎯ nC
Turn-On Delay Time (Note 10) t
D(on)
⎯ 1.6 ⎯ ns
V
DD
= -30V, V
GS
= -10V
I
D
= -1A, R
G
≅ 6.0Ω
Turn-On Rise Time (Note 10) t r
⎯ 2.2 ⎯ ns
Turn-Off Delay Time (Note 10) t
D(off)
⎯ 11.2 ⎯ ns
Turn-Off Fall Time (Note 10) t
f
⎯ 5.7 ⎯ ns
Notes: 8. Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2%
9. For design aid only, not subject to production testing.
10. Switching characteristics are independent of operating junction temperatures.