Diodes ZXMS6004DG - Manual

Issue 1 - December 2008 1 www.zetex.com
© Diodes Incorporated, 2008 www.diodes.com
A Product Line of
Diodes Incorporated
ZXMS6004DG
60V N-channel self protected enhancement mode
Intellifet MOSFET
Summary
Continuous drain source voltage 60 V
On-state resistance 500 m
Ω
Nominal load current (V
IN
= 5V) 1.3 A
Clamping energy 490mJ
Description
The ZXMS6004DG is a self protected low side MOSFET with logic level
input. It integrates over-temperature, over-current, over-voltage (active
clamp) and ESD protected logic level functionality. The ZXMS6004DG is
ideal as a general purpose switch driven from 3.3V or 5V
microcontrollers in harsh environments where standard MOSFETs are
not rugged enough.
Features
• Compact high power dissipation package
• Low input current
• Logic Level Input (3.3V and 5V)
• Short circuit protection with auto restart
• Over voltage protection (active clamp)
• Thermal shutdown with auto restart
• Over-current protection
• Input Protection (ESD)
• High continuous current rating
Ordering information
Device Part mark Reel size
(inches)
Tape width
(mm)
Quantity per reel
ZXMS66004DGTA ZXMS
6004D
7 12 embossed 3,000 units
D
Top view
S
D
IN