Diodes 2DA2018 - Manual (Page 2)

2DA2018
Document number: DS31823 Rev. 3 - 2
2 of 5
www.diodes.com
October 2010
© Diodes Incorporated
2DA2018
ADVAN
CE I
N
F
O
RM
ATI
O
N
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Collector-Base Voltage V CBO
-15 V
Collector-Emitter Voltage V
CEO
-12 V
Emitter-Base Voltage V
EBO
-6 V
Collector Current - Continuous I C
-500 mA
Peak Pulse Collector Current I
CM
-1 A
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 4) @ T
A
= 25
°C P
D
150 mW
Thermal Resistance, Junction to Ambient (Note 4) @ T
A
= 25 °C
R θJA 833 °C/W
Operating and Storage Temperature Range T
J
, T
STG
-55 to +150 °C
Notes: 4. Device mounted on FR-4 PCB with minimum recommended pad layout.
0
20
40
60
80
100
120
140
160
P
, P
OW
E
R
DI
S
S
IP
A
T
ION
(mW
)
D
0 20 40 60 80 100 120 140 160
T , AMBIENT TEMPERATURE ( C)
A
°
Fig. 1 Power Dissipation vs. Ambient Temperature
R = 833°C/W θJA
0
20
40
60
80
100
0.0001 0.001 0.1 10 1,000
Fig. 2 Single Pulse Maximum Power Dissipation
t , PULSE DURATION TIME (s)
1
0.01 1 100
Single Pulse
T - T = P * R (t)
Duty Cycle, D = t /t
J A JA
1 2
θ
R (t) = r(t) * θJA R
R = 470°C/W
θ
θ
JA
JA
P
(p
k
),
P
EA
K
T
R
A
N
SI
E
N
T
P
O
WE
R
(W
)
0.0001 0.001 0.01 0.1 1 10 100 1,000
Fig. 3 Transient Thermal Response
t , PULSE DURATION TIME (s)
1
0.001
0.01
0.1
1
r(t),
T
R
ANSI
E
N
T
T
H
E
R
MA
L
R
ES
IS
T
AN
C
E
T - T = P * R (t)
Duty Cycle, D = t /t
J A JA
1 2
θ
R (t) = r(t) * θJA R
R = 470°C/W
θ
θ
JA
JA
P(pk)
t
1
t
2
D = 0.7
D = 0.5
D = 0.3
D = 0.05
D = 0.02
D = 0.01
D = 0.005
D = Single Pulse
D = 0.9
D = 0.1