Diodes 2DD2652 - Manual

2DD2652
Document number: DS31633 Rev. 2 - 2
1 of 4
www.diodes.com
December 2008
© Diodes Incorporated
2DD2652
NEW PROD
UC
T
LOW V
CE(SAT)
NPN SURFACE MOUNT TRANSISTOR
Features
•
Epitaxial Planar Die Construction
• Low Collector-Emitter Saturation Voltage
•
Ideal for Low Power Amplification and Switching
•
Complementary PNP Type Available (2DB1689)
• Ultra-Small Surface Mount Package
• Lead Free By Design/RoHS Compliant (Note 1)
•
"Green Device" (Note 2)
Mechanical Data
• Case:
SOT-323
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020D
• Terminals: Finish - Matte Tin annealed over Alloy 42 leadframe.
Solderable per MIL-STD-202, Method 208
• Terminal Connections: See Diagram
•
Marking Information: See Page 3
•
Ordering Information: See Page 3
• Weight: 0.006 grams (approximate)
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Collector-Base Voltage V
CBO
15 V
Collector-Emitter Voltage V CEO
12 V
Emitter-Base Voltage V
EBO
6 V
Collector Current - Continuous I
C
1.5 A
Peak Pulse Collector Current I CM
3 A
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 3) @ T
A
= 25
°C P
D
300 mW
Thermal Resistance, Junction to Ambient (Note 3) @ T
A
= 25
°C
R θJA 417 °C/W
Power Dissipation (Note 4) @ T A = 25
°C P
D
500 mW
Thermal Resistance, Junction to Ambient (Note 4) @ T
A
= 25 °C
R θJA 250 °C/W
Operating and Storage Temperature Range T
J
, T
STG
-55 to +150 °C
Electrical Characteristics
@T A = 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Conditions
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
V (BR)CBO
15 ⎯ ⎯ V I C = 10
μA, I
E = 0
Collector-Emitter Breakdown Voltage (Note 5) V
(BR)CEO
12 ⎯ ⎯ V I
C
= 1mA, I
B
= 0
Emitter-Base Breakdown Voltage V
(BR)EBO
6 ⎯ ⎯ V I
E
= 10 μA, I
C
= 0
Collector Cut-Off Current I CBO
⎯ ⎯ 0.1 μA
V CB = 15V, I E = 0
Emitter Cut-Off Current I
EBO
⎯ ⎯ 0.1 μA
V
EB
= 6V, I
C
= 0
ON CHARACTERISTICS (Note 5)
Collector-Emitter Saturation Voltage
V CE(SAT)
⎯ 80 200 mV I C = 500mA, I B = 25mA
DC Current Gain h
FE
270 ⎯ 680 ⎯
V
CE
= 2V, I
C
= 200mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance C
obo
⎯ 11 ⎯ pF
V
CB
= 10V, I
E
= 0,
f = 1MHz
Current Gain-Bandwidth Product f T
⎯ 260 ⎯ MHz
V
CE
= 2V, I
C
= 100mA,
f = 100MHz
Notes: 1. No purposefully added lead.
2. Diode’s Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB with minimum recommended pad layout.
4. Device mounted on FR-4 PCB with 1 inch
2 copper pad layout.
5. Measured under pulsed conditions. Pulse width = 300
μs. Duty cycle ≤2%.
Top View Device Schematic
E B
C
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