Diodes BC847CDLP - Manual (Page 2)

BC847CDLP
Document number: DS30817 Rev. 7 - 2
2 of 6
www.diodes.com
May 2013
© Diodes Incorporated
BC847CDLP
Maximum Ratings
(@T
A
= +25°C unless otherwise specified.)
Characteristic Symbol Value Unit
Collector-Base Voltage V
CBO
50 V
Collector-Emitter Voltage V
CEO
45 V
Emitter-Base Voltage V
EBO
6 V
Collector Current I
C
100 mA
Thermal Characteristics – Total Device
(@T
A
= +25°C unless otherwise specified.)
Characteristic Symbol Value Unit
Power Dissipation (Note 5) Total Device P
D
350 mW
Thermal Resistance, Junction to Ambient (Note 5) R
θJA
357 °C/W
Operating and Storage Temperature Range T
J
, T
STG
-65 to +150 °C
Note: 5. For a device surface mounted on minimum recommended pad layout FR-4 PCB with single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
Thermal Characteristics – Total Device
0
50
100
50 100 150
P
,
P
O
WE
R
DI
SSI
P
A
T
IO
N (
m
W
)
D
T , AMBIENT TEMPERATURE (°C)
Figure 1 Power Dissipation vs. Ambient Temperature
A
150
200
250
0
300
350
25 75 125
R °C/W
JA
= 357
Note 5