Diodes D5V0L4B5SO - Manual (Page 2)

D5V0L4B5SO
Document number: DS 35572 Rev. 5 – 2
2 of 5
www.diodes.com
January 2012
© Diodes Incorporated
D5V0L4B5SO
ADVAN
CE I
N
F
O
RM
ATI
O
N
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit Conditions
Peak Pulse Power Dissipation P PP
84 W 8/20
μs, Per Fig. 2
Peak Pulse Current I
PP
6 A 8/20
μs, Per Fig. 2
ESD Protection – Contact Discharge V
ESD_Contact
±30 kV Standard IEC 61000-4-2
ESD Protection – Air Discharge V
ESD_Air
±30 kV Standard IEC 61000-4-2
Thermal Characteristics
Characteristic Symbol Value Unit
Package Power Dissipation (Note 5) P
D
300 mW
Thermal Resistance, Junction to Ambient (Note 5) R θJA 417 °C/W
Operating Junction Temperature Range T
J
-65 to +150 °C
Storage Temperature Range T
STG
-65 to +150
°C
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Conditions
Reverse Working Voltage V
RWM
- − 5.0 V -
Breakdown Voltage V BR
6 7 8 V I R = 1.0mA
Reverse Leakage Current (Note 6) I
R
- 10 100 nA V
RWM
= 5V
Clamping Voltage (Note 4) V CL
- 7.0 9.0 V I
PP
= 1A, t
p
= 8/20 μs
- 8.7 10.7 V I
PP
= 3A, t
p
= 8/20 μs
- 10.5 12.0 V I
PP
= 5A, t
p
= 8/20
μs
- 11.5 14.0 V I
PP
= 6A, t
p
= 8/20 μs
Differential Resistance R
DIF
- 0.2 - Ω I
R
= 1.0A, t
p
= 8/20 μs
Channel Input Capacitance C
T
- 15 20 pF
V
IN
= 0V, f = 1MHz
(Channel to Pin 2)
Notes: 4. Measured from channel to pin 2; Non-repetitive current pulse per Fig. 2.
5. Device mounted on FR-4 PCB pad layout (2oz copper) as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on our website at
http://www.diodes.com.
6. Short duration pulse test used to minimize self-heating effect
0 25 50 75 100 125 150 175 200
100
75
50
25
0
T , AMBIENT TEMPERATURE (°C)
Fig. 1 Pulse Derating Curve
A
P
EA
K
P
U
LS
E D
E
R
A
T
IN
G
IN
%
O
F
PEA
K POW
E
R OR
CURRENT
0
t, TIME ( s)
Fig. 2 Pulse Waveform
μ
20 40 60
100
50
0
I
, PE
AK P
U
L
S
E
C
URRENT
(
%
I
)
Pp
p
P