Diodes D5V0P4B5LP08 - Manual (Page 2)

D5V0P4B5LP08
Document number: DS36249 Rev. 1 - 2
2 of 5
www.diodes.com
March 2014
© Diodes Incorporated
D5V0P4B5LP08
NEW PROD
UC
T
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit Conditions
Peak Pulse Power Dissipation P
PP
40 W 8/20µs
Peak Pulse Current I
PP
3 A 8/20µs
ESD Protection – Contact Discharge V
ESD_Contact
±15 kV IEC 61000-4-2 Standard
ESD Protection – Air Discharge V
ESD_Air
±15 kV IEC 61000-4-2 Standard
Thermal Characteristics
Characteristic Symbol Value Unit
Package Power Dissipation (Note 5) P
D
300 mW
Thermal Resistance, Junction to Ambient (Note 5) R
θJA
417 °C/W
Operating and Storage Temperature Range T
J
, T
STG
-65 to +150 °C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Conditions
Reverse Standoff Voltage V
RWM
— — ±5.5 V —
Leakage Current (Note 6) I
RM
— — 100 nA V
RWM
= 5V
Clamping Voltage from Data Pin to GND V
CL1
—
— 10
13 —
—
V
I
PP
= 1A, t
p
= 8/20μS
I
PP
= 3A, t
p
= 8/20μS
Clamping Voltage from GND to Data Pin V
CL2
—
— 9
13
—
—
V
I
PP
= 1A, t
p
= 8/20μS
I
PP
= 3A, t
p
= 8/20μS
Dynamic Resistance R
DYN
—
— 0.45
0.42 —
—
Ω
Pins to GND (Note 7)
GND to Pins (Note 7)
IO Capacitance C
IO
— 4.8 7 pF V
IO
= 2.5V, f = 1MHz
Breakdown Voltage from Data Pin to GND V
BRF
6 — — V I
R
= 1mA
Breakdown Voltage from GND to Data Pin V
BRR
6 — — V I
R
= 1mA
Notes: 5. Device mounted on FR-4 PCB pad layout (2oz copper) as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on our website at
http://www.diodes.com.
6. Short duration pulse test used to minimize self-heating effect.
7. Extraction of RDYN using least squares fit of TLP between I = 10A and I = 20A.
40V/div
20ns/div
Figure 1 IEC 6100-4-2 Clamping Voltage
+8kV Contact
40V/div
20ns/div
Figure 2 IEC 6100-4-2 Clamping Voltage
-8kV Contact