Diodes AP2281 - Manual (Page 3)

AP2281
Document number: DS31359 Rev. 7 - 2
3 of 11
www.diodes.com
November 2013
© Diodes Incorporated
AP2281
Absolute Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Symbol Parameter Ratings Unit
ESD HBM Human Body Model ESD Protection 5 KV
ESD MM Machine Model ESD Protection
SOT26 500 V
U-DFN2018-6 450 V
V
IN
Input Voltage 6.5 V
V
OUT
Output Voltage VIN +0.3 V
V
EN
Enable Voltage 6.5 V
I
load
Maximum Continuous Load Current 2 A
T
J
Operating Junction Temperature Range -40 to +125 °C
T
ST
Storage Temperature Range -65 to +150 °C
P
D
Power Dissipation
SOT26 (Note 4, 5, 6) 720 mW
U-DFN2018-6 (Note 4, 5, 7) 1410 mW
Notes: 4. T J , max = +125°C.
5. Ratings apply to ambient temperature at +25°C.
Stresses greater than the 'Absolute Maximum Ratings' specified above, may cause permanent damage to the device. These are stress ratings only; functional
operation of the device at these or any other conditions exceeding those indicated in this specification is not implied. Device reliability may be affected by exposure to
absolute maximum rating conditions for extended periods of time.
Recommended Operating Conditions
(@T
A
= +25°C, unless otherwise specified.)
Symbol Parameter Min Max Unit
V
IN
Input voltage 1.5 6.0 V
I
OUT
Output Current 0 2.0 A
T
A
Operating Ambient Temperature -40 +85 °C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Symbol Parameters Test Conditions Min Typ Max Unit
I
Q
Input Quiescent Current V
EN
= V
IN
, I
OUT
= 0 — 0.01 1 μA
I
SHDN
Input Shutdown Current V
EN
= 0V, OUT open — 0.01 1 μA
I
LEAK
Input Leakage Current V
EN
= 0V, OUT grounded — 0.01 1 μA
R
DS(ON)
Switch on-resistance
V
IN
= 5.0V — 80 100 mΩ
V
IN
= 3.3V — 95 120 mΩ
V
IN
= 1.8V — 160 210 mΩ
V
IN
= 1.5V — 210 280 mΩ
V
IL
EN Input Logic Low Voltage V
IN
= 1.5V to 6V — — 0.4 V
V
IH
EN Input Logic High Voltage
1.5V ≤ V
IN
≤ 2.7V 1.4 — — V
2.7V < V
IN
< 5.25V 1.6 — — V
V
IN
≥ 5.25V 1.7 — — V
I
SINK
EN Input leakage V
EN
= 5V — — 1 μA
T
D(ON)
Output turn-on delay time R
LOAD
= 10Ω — 1 — μS
T
ON
Output turn-on rise time
AP2281-1, R
LOAD
= 10Ω — 1000 1500 μS
AP2281-3, R
LOAD
= 10Ω — 100 150 μS
T
D(OFF)
Output turn-off delay time R
LOAD
= 10Ω
— 0.5 1 μS
R
DISCH
Discharge FET on-resistance For AP2281-3 only, V
EN
= GND — 65 100 Ω
θ
JA
Thermal Resistance Junction-to-Ambient
SOT26 (Note 6) — 153 —
°C/W
U-DFN2018-6 (Note 7)
—
78
—
θ
JC
Thermal Resistance Junction-to-case
SOT26 (Note 6)
—
29
—
°C/W
U-DFN2018-6 (Note 7)
—
19
—
Notes: 6. Test condition for SOT26: Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
7. Test condition for U-DFN2018-6: Device mounted on FR-4 2-layer board, 2oz copper, with minimum recommended pad on top layer and 3 vias to bottom
layer 1.0"x1.4" ground plane.