Diodes AP2101/AP2111 - Manual (Page 3)

AP2101/AP2111
Document number: DS32015 Rev. 3 - 2
3 of 14
www.diodes.com
January 2013
© Diodes Incorporated
AP2101/AP2111
Recommended Operating Conditions
(@T
A
= +25°C, unless otherwise specified.)
Symbol Parameter Min Max Units
V
IN
Input voltage 2.7 5.5 V
I
OUT
Output Current 0 2.0 A
T
A
Operating Ambient Temperature -35 85 °C
V
IL
EN Input Logic Low Voltage 0 0.8 V
V
IH
EN Input Logic High Voltage 2 V
IN
V
Electrical Characteristics
(@T
A
= +25°C, V
IN
= +5.0V, unless otherwise specified.)
Symbol Parameter Test Conditions (Note 5) Min Typ Max Unit
V
UVLO
Input UVLO R
LOAD
= 1kΩ 1.6 1.9 2.5 V
I
SHDN
Input Shutdown Current Disabled, I
OUT
= 0 0.5 1 µA
I
Q
Input Quiescent Current Enabled, I
OUT
= 0 45 70 µA
I
LEAK
Input Leakage Current Disabled, OUT grounded 1 µA
I
REV
Reverse Leakage Current Disabled, V
IN
= 0V, V
OUT
= 5V, I
REV
at V
IN
0.05 µA
R
DS(ON)
Switch On-Resistance
V
IN
= 5V, I
OUT
= 1.5A
T
A
= +25°C
MSOP8-EP 90 115
mΩ
SO-8 95 115
-40°C ≤ T
A
≤ +85°C 140
V
IN
= 3.3V, I
OUT
= 1.5A
T
A
= 25°C 115 140
-40°C ≤ T
A
≤ +85°C 170
I
LIMIT
Over-Load Current Limit V
IN
= 5V, V
OUT
= 4.5V, C
L
=120µF 2.1 2.45 2.8 A
I
TRIG
Current Limiting Trigger Threshold Output Current Slew rate (<100A/s) , C
L
= 100µF 2.5 A
I
SHORT
Short-Circuit Current Limit Enabled into short circuit, C
L
= 100µF 2.5 A
T
SHORT
Short-Circuit Response Time V
OUT
= 0V to I
OUT
= I
LIMIT
(short applied to output) 5 µs
V
IL
EN Input Logic Low Voltage V
IN
= 2.7V to 5.5V 0.8 V
V
IH
EN Input Logic High Voltage V
IN
= 2.7V to 5.5V 2 V
I
SINK
EN Input leakage V
EN
= 5V 1 µA
T
D(ON)
Output Turn-On Delay Time C
L
= 1µF, R
LOAD
= 10Ω 50 µs
T
R
Output Turn-On Rise Time C
L
= 1µF, R
LOAD
= 10Ω 0.6 1.5 ms
T
D(OFF)
Output Turn-Off Delay Time C
L
= 1µF, R
LOAD
= 10Ω 4 µs
T
F
Output Turn-Off Fall Time C
L
= 1µF, R
LOAD
= 10Ω 0.03 0.1 ms
R
FLG
FLG Output FET On-Resistance I
FLG
=10mA, C
L
=100µF 20 40 Ω
T
BLANK
FLG Blanking Time C
IN
= 10µF, C
L
= 100µF 4 7 15 ms
R
DIS
Discharge Resistance (Note 6) V
IN
= 5V, disabled, I
OUT
= 1mA 290 Ω
T
SHDN
Thermal Shutdown Threshold Enabled, R
LOAD
= 1kΩ 140 °C
T
HYS
Thermal Shutdown Hysteresis 25 °C
θ
JA
Thermal Resistance Junction-to-
Ambient SO-8 (Note 7) 110 °C/W
MSOP-8EP (Note 8) 60 °C/W
Notes: 5. Pulse-testing techniques maintain junction temperature close to ambient temperature; thermal effects must be taken into account separately.
6. The discharge function is active when the device is disabled (when enable is de-asserted). The discharge function offers a resistive discharge path for
the external storage capacitor. This is suitable only to discharge filter capacitors for limited time and cannot dissipate steady state currents greater than
8mA.
7. Test condition for SO-8: Device mounted on FR-4, 2oz copper, with minimum recommended pad layout.
8. Test condition for MSOP-8EP: Device mounted on 2” x 2” FR-4 substrate PC board, 2oz copper, with minimum recommended pad on top layer and
thermal vias to bottom layer ground plane.