Diodes DSL12AW - Manual (Page 3)

DSL12AW
Document Number: DS31644 Rev. 2 - 2
3 of 6
www.diodes.com
February 2011
© Diodes Incorporated
ADVAN
CE I
N
F
O
RM
ATI
O
N
DSL12AW
Electrical Characteristics
@T A = 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
BV CBO
-12 -35 ⎯ V I C = -100
μA, I
E = 0
Collector-Emitter Breakdown Voltage (Note 5) BV
CEO
-12 -20 ⎯ V I
C
= -10mA, I
B
= 0
Emitter-Base Breakdown Voltage BV
EBO
-5 -8.3 ⎯ V I
E
= -100 μA, I
C
= 0
Collector Cutoff Current I CBO
⎯ -1 -100 nA V CB = -12V, I E = 0
Collector Cutoff Current I
CES
⎯ -1 -100 nA V
CE
= -12V, V
BE
= 0
Emitter Cutoff Current I
EBO
⎯ -1 -100 nA V
EB
= -5V, I
C
= 0
ON CHARACTERISTICS
DC Current Gain (Note 5) h
FE
100
100
100 175
165
160
⎯
300
⎯
V
V
CE
= -1.5V, I
C
= -0.5A
V
CE
= -1.5V, I
C
= -0.8A
V
CE
= -1.5V, I
C
= -1A
Collector-Emitter Saturation Voltage (Note 5) V CE(sat)
⎯
⎯
⎯
-70
-95
-115
-160
-235
-290
mV
I C = -0.5A, I B = -10mA
I C = -0.8A, I B = -16mA
I
C
= -1A, I
B
= -20mA
Collector-Emitter Saturation Resistance R
CE(sat)
⎯ ⎯ 290 m Ω I
C
= -1A, I
B
= -20mA
Base-Emitter Saturation Voltage V
BE(sat)
⎯ ⎯ -0.95 V I
C
= -1A, I
B
= -20mA
Base-Emitter Turn On Voltage V BE(on)
⎯ ⎯ -0.95 V V CE = -1.5V, I C = -1A
Output Capacitance C
obo
⎯ ⎯ 65 pF V
CB
= -1.5V, f = 1.0MHz
Current Gain-Bandwidth Product f
T
⎯ 180 ⎯ MHz V
CE
= -5V, I
C
= -100mA, f = 100MHz
Notes: 5. Measured under pulsed conditions. Pulse width = 300 μs. Duty cycle ≤2%.
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0 2 4 6 8 10 12
V , COLLECTOR-EMITTER VOLTAGE (V)
CE
Fig. 4 Typical Collector Current vs. Collector-Emitter Voltage
I,
C
O
LL
E
C
T
O
R
C
U
R
R
EN
T
(A
)
C
I = 1mA
B
I = 2mA
B
I = 3mA
B
I = 4mA
B
I = 5mA
B
0
50
100
150
200
250
300
350
400
450
500
0.001 0.01 0.1 1
I , COLLECTOR CURRENT (A)
C
Fig. 5 Typical DC Current Gain vs. Collector Current
h,
D
C
C
U
R
R
EN
T
G
AI
N
FE
T = -55°C
A
V = -1.5V
CE
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A