Diodes IMX8 - Manual

IMX8
DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features
• Epitaxial Planar Die Construction
• Complementary PNP Type Available (IMT4)
•
Small Surface Mount Package
• Lead Free/RoHS Compliant (Note 3)
• "Green" Device, Note 4 and 5
Mechanical Data
• Case: SOT-26
•
Case Material: Molded Plastic, "Green" Molding
Compound, Note 5. UL Flammability Classification
Rating 94V-0
•
Moisture Sensitivity: Level 1 per J-STD-020C
•
Terminal Connections: See Diagram
• Terminals: Solderable per MIL-STD-202, Method 208
•
Lead Free Plating (Matte Tin Finish annealed over
Copper leadframe).
•
Marking Information: KX8, See Page 3
• Ordering & Date Code Information: See Page 3
• Weight: 0.016 grams (approximate)
SOT-26
Dim Min Max Typ
A 0.35 0.50 0.38
B 1.50 1.70 1.60
C 2.70 3.00 2.80
D ⎯ ⎯ 0.95
F ⎯ ⎯ 0.55
H 2.90 3.10 3.00
J 0.013 0.10 0.05
K 1.00 1.30 1.10
L 0.35 0.55 0.40
M 0.10 0.20 0.15
α 0 ° 8 ° ⎯
All Dimens ons in mm i
A
M
J
L D F
B C
H
K
B
2
B
1
E
1
C
2
E
2
C
1
B
2
B
1
E
1
C
2
E
2
C
1
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Collector-Base Voltage V CBO
120 V
Collector-Emitter Voltage V CEO
120 V
Emitter-Base Voltage V
EBO
5.0 V
Collector Current - Continuous I
C
50 mA
Power Dissipation (Note 1) P
d
300 mW
Thermal Resistance, Junction to Ambient (Note 1) R θJA 417 °C/W
Operating and Storage Temperature Range T
j
, T
STG
-55 to +150 °C
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 2)
Collector-Base Breakdown Voltage
V
(BR)CBO
120 ⎯ ⎯ V I
C
= 50
μA
Collector-Emitter Breakdown Voltage V
(BR)CEO
120 ⎯ ⎯ V I
C
= 1.0mA
Emitter-Base Breakdown Voltage V
(BR)EBO
5.0 ⎯ ⎯ V I
E
= 50
μA
Collector Cutoff Current I
CBO
⎯ ⎯ 0.5 μA
V
CB
= 100V
Emitter Cutoff Current I EBO
⎯ ⎯ 0.5 μA
V EB = 4.0V
ON CHARACTERISTICS (Note 2)
DC Current Gain
h FE
180 ⎯ 820 ⎯
I C = 2.0mA, V CE = 6.0V
Collector-Emitter Saturation Voltage V CE(SAT)
⎯ ⎯ 0.5 V I C = 10mA, I B = 1.0mA
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product f
T
⎯ 140 ⎯ MHz
V CE = 12V, I C = 2.0mA,
f = 100MHz
Notes: 1. Device mounted on FR-5 PCB 1.0 x 0.75 x 0.062 inch pad layout as shown on Diodes Inc. suggested pad layout AP02001, which can be found on our
website at http://www.diodes.com/datasheets/ap02001.pdf. 200mW per element must not be exceeded.
2. Short duration pulse test used to minimize self-heating effect.
3. No purposefully added lead.
4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
5. Product manufactured with Date Code 0627 (week 27, 2006) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code 0627 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
DS30304 Rev. 8 - 2 1 of 3
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IMX8
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