New prod uc t, Electrical characteristics, R1, r2 types – Diodes DDTB (LO-R1) U User Manual

Page 2: R1 – only types

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DS30400 Rev. 6 - 2

2 of 3

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DDTB (LO-R1) U

© Diodes Incorporated

NEW PROD

UC

T


Electrical Characteristics

@T

A

= 25°C unless otherwise specified

R1, R2 Types

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

DDTB122LU
DDTB142JU

V

l(off)

-0.3
-0.3

V

V

CC

= -5V, I

O

= -100

μA

Input Voltage

DDTB122LU

DDTB142JU

V

l(on)

-2.0
-2.0

V

V

O

= -0.3V, I

O

= -20mA

V

O

= -0.3V, I

O

= -20mA

Output Voltage

V

O(on)

-0.3V

V

I

O

/I

l

= -50mA/-2.5mA

Input Current

DDTB122LU
DDTB142JU

I

l

-28
-13

mA V

I

= -5V

Output Current

I

O(off)

-0.5

μA V

CC

= -50V, V

I

= 0V

DC Current Gain

DDTB122LU
DDTB142JU

G

l

56
56

⎯ V

O

= -5V, I

O

= -50mA

Gain-Bandwidth Product*

f

T

200

MHz V

CE

= -10V, I

E

= -5mA, f = 100MHz

* Transistor - For Reference Only

Electrical Characteristics

@T

A

= 25°C unless otherwise specified

R1 – Only Types

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

Collector-Base Breakdown Voltage

BV

CBO

-50

V

I

C

= -50

μA

Collector-Emitter Breakdown Voltage

BV

CEO

-40

V

I

C

= -1mA

Emitter-Base Breakdown Voltage DDTB122TU
DDTB142TU

BV

EBO

-5

V

I

E

= -50

μA

I

E

= -50

μA

Collector Cutoff Current

I

CBO

-0.5

μA V

CB

= -50V

Emitter Cutoff Current

DDTB122TU
DDTB142TU

I

EBO


-0.5
-0.5

μA V

EB

= -4V

Collector-Emitter Saturation Voltage

V

CE(sat)

-0.3

V

I

C

= -50mA, I

B

= -2.5mA

DC Current Transfer Ratio

DDTB122TU
DDTB142TU

h

FE

100
100

250
250

600
600

⎯ I

C

= -5mA, V

CE

= -5V

Gain-Bandwidth Product*

f

T

200

MHz V

CE

= -10V, I

E

= 5mA, f = 100MHz

* Transistor - For Reference Only































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