Diodes DDTC114ELP - Manual (Page 2)

DDTC114ELP
Document number: DS30945 Rev. 7 - 2
2 of 5
www.diodes.com
February 2011
© Diodes Incorporated
DDTC114ELP
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Supply Voltage V CC
50 V
Input Voltage V
IN
-10 to +40 V
Output Current I
O
50 mA
Collector Current I C(MAX)
100 mA
Thermal Characteristics
@T A = 25°C unless otherwise specified
Characteristic Symbol Value Unit
Power Dissipation (Note 4) P
D
250 mW
Power Derating above 25°C P
der
2 mW/°C
Thermal Resistance, Junction to Ambient Air (Note 4)
(Equivalent to one heated junction of NPN)
R θJA 500 °C/W
Operating and Storage Temperature Range T J , T STG
-55 to +150 °C
Electrical Characteristics
@T A = 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
Off Characteristics (Note 5)
Collector-Base Breakdown Voltage
BV CBO
50 ⎯ ⎯ V I C = 10
μA, I
E = 0
Collector-Emitter Breakdown Voltage BV
CEO
50 ⎯ ⎯ V I
C
= 1.0mA, I
B
= 0
Emitter-Base Breakdown Voltage BV
EBO
5 ⎯ ⎯ V I
E
= 50 μA, I
C
= 0
Collector Cutoff Current I
CEX
⎯ ⎯ 0.5 μA V
CE
= 50V, V
EB(OFF)
= 3.0V
Base Cutoff Current (I
BEX
) I
BL
⎯ ⎯ 0.5 μA
V
CE
= 50V, V
EB(OFF)
= 3.0V
Collector-Base Cut Off Current I
CBO
⎯ ⎯ 0.5
μA
V
CB
= 50V, I
E
= 0
Collector-Emitter Cut Off Current, I
O(OFF)
I
CEO
⎯ ⎯ 1 μA V
CB
= 50V, I
B
= 0
Emitter-Base Cut Off Current I
EBO
⎯ ⎯ 0.4 mA V
EB
= 4V, I
C
= 0
Input Off Voltage V
I(off)
⎯ 1.16 0.5 V V
CC
= 5V, I
O
= 100uA
On Characteristics (Notes 5 & 6)
DC Current Gain h
FE
10 ⎯ ⎯ ⎯
V
CE
= 5V, I
C
= 1mA
15 ⎯ ⎯ ⎯ V
CE
= 5V, I
C
= 2mA
60 ⎯ ⎯ ⎯ V
CE
= 5V, I
C
= 10mA
100 ⎯ ⎯ ⎯
V
CE
= 5V, I
C
= 50mA
90 ⎯ ⎯ ⎯
V
CE
= 5V, I
C
= 70mA
Collector-Emitter Saturation Voltage V
CE(sat)
⎯ ⎯ 0.15 V I
C
= 10mA, I
B
= 1mA
⎯ ⎯ 0.2 V I C = 50mA, I B = 5mA
⎯ ⎯ 0.25 V I
C
= 50mA, I
B
= 2.5mA
⎯ ⎯ 0.25 V I
C
= 50mA, I
B
= 10mA
⎯ ⎯ 0.3 V I C = 70mA, I B = 10mA
Base-Emitter Turn-On Voltage V
BE(on)
⎯ ⎯ 0.85 V V
CE
= 5V, I
C
= 2mA
⎯ ⎯ 0.95 V V
CE
= 5V, I
C
= 10mA
Base-Emitter Saturation Voltage V
BE(sat)
⎯ ⎯ 0.98 V I
C
= 10mA, I
B
= 1mA, V
CE
= 5V
⎯ ⎯ 1.2 V I
C
= 50mA, I
B
= 5mA, V
CE
= 5V
Input-On Voltage V
I(on)
2.5 1.6
⎯
V V
O
= 0.3V, I
O
= 50mA
Input Current I
I
⎯ ⎯ 0.88 mA V
I
= 5V
Output On Voltage (Same as V CE(sat) ) V O(on)
⎯ ⎯ 0.3 V I I = 2.5mA, I O = 50mA
Input Resistance R1 7 10 13 K Ω ⎯
Resistance Ratio (R2/R1) 0.8 1 1.2 ⎯ ⎯
Small Signal Characteristics
Current Gain-Bandwidth Product
f
T
⎯ 250 ⎯ MHz V
CE
= 10V, I
E
= 5mA, f = 1MHz
Notes: 4. Device mounted on FR-4 PCB, 1” x 0.85” x 0.062”
5. Short duration pulse test used to minimize self-heating effect. Pulse Test: Pulse width tp
<300 μs, Duty Cycle, d ≤ 2%.
6. Guaranteed by design.