Diodes DMG7410SFG - Manual (Page 3)

POWERDI is a registered trademark of Diodes Incorporated.
DMG7410SFG
Document number: DS35108 Rev. 7 - 2
3 of 7
www.diodes.com
October 2012
© Diodes Incorporated
DMG7410SFG
NEW PROD
UC
T
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000
t1, PULSE DURATION TIME (sec)
Fig. 3 Transient Thermal Resistance
0.001
0.01
0.1
1
r(t
),
T
R
ANS
IEN
T
T
H
E
R
MA
L
R
ES
IS
T
AN
C
E
R = r * R θJA(t) (t) θ
θ
JA
JA
R = 60 C/W
Duty Cycle, D = t1/t2
°
D = 0.5
D = 0.7
D = 0.9
D = 0.3
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
D = Single Pulse
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 9)
Drain-Source Breakdown Voltage
BV
DSS
30 - - V V
GS
= 0V, I
D
= 250 μA
Zero Gate Voltage Drain Current T
J
= 25°C I
DSS
- - 0.1 μA
V
DS
= 30V, V
GS
= 0V
Gate-Source Leakage I
GSS
- - ±100 nA V
GS
= ±25V, V
DS
= 0V
ON CHARACTERISTICS (Note 9)
Gate Threshold Voltage
V
GS(th)
0.8 1.2 2.0 V V
DS
= V
GS
, I
D
= 250 μA
Static Drain-Source On-Resistance R
DS (ON)
- 13.5 20
mΩ
V
GS
= 10V, I
D
= 10A
- 22 27 V
GS
= 4.5V, I
D
= 7.5A
Forward Transfer Admittance |Y
fs
| - 13.0 - S V
DS
= 5V, I
D
= 10A
Diode Forward Voltage V
SD
- 0.7 1.0 V V
GS
= 0V, I
S
= 1A
DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance
C
iss
- 580 -
pF
V
DS
= 15V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance C
oss
- 110 -
Reverse Transfer Capacitance C rss
- 70 -
Gate Resistance R
g
- 2.0 3.0 Ω V
DS
= 0V, V
GS
= 0V, f = 1MHz
Total Gate Charge V
GS
= 4.5V Q
g
- 5.3 -
nC
V
GS
= 4.5V, V
DS
= 15V, I
D
= 10A
Total Gate Charge V
GS
= 10V Q
g
- 11.3 -
V GS = 10V, V DS = 15V,
I
D
= 10A
Gate-Source Charge Q
gs
- 1.9 -
Gate-Drain Charge Q
gd
- 1.9 -
Turn-On Delay Time t
D(on)
- 4.4 - ns
V
GS
= 10V, V
DS
= 15V,
R
L
= 15 Ω, R
G
= 6 Ω
Turn-On Rise Time t r
- 4.6 - ns
Turn-Off Delay Time t
D(off)
- 19.5 - ns
Turn-Off Fall Time t
f
- 5.8 - ns
Notes: 9. Short duration pulse test used to minimize self-heating effect.
10. Guaranteed by design. Not subject to production testing.