Diodes DMN3026LVT - Manual (Page 2)

DMN3026LVT
Document number: DS36813 Rev. 3 - 2
2 of 6
www.diodes.com
April 2014
© Diodes Incorporated
DMN3026LVT
ADVAN
CE I
N
F
O
RM
ATI
O
N
ADVANCED INFORMATION
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Drain-Source Voltage V
DSS
30 V
Gate-Source Voltage V
GSS
±20 V
Continuous Drain Current (Note 6) V
GS
= 10V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
6.6
5.3
A
t<10s
T
A
= +25°C
T
A
= +70°C
I
D
8.5
6.8
A
Maximum Body Diode Forward Current (Note 6) I
S
3.0 A
Pulsed Drain Current (10 s pulse, duty cycle = 1%) I
DM
35 A
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Total Power Dissipation (Note 5)
T
A
= +25°C
P
D
1.2
W
T
A
= +70°C 0.8
Thermal Resistance, Junction to Ambient (Note 5)
Steady state
R
θJA
100 °C/W
t<10s 60 °C/W
Total Power Dissipation (Note 6)
T
A
= +25°C
P
D
1.5
W
T
A
= +70°C 1.0
Thermal Resistance, Junction to Ambient (Note 6)
Steady state
R
θJA
83 °C/W
t<10s 50 °C/W
Thermal Resistance, Junction to Case (Note 6) R
θJC
14.5 °C/W
Operating and Storage Temperature Range T
J,
T
STG
-55 to +150 °C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV
DSS
30   V V
GS
= 0V, I
D
= 250µA
Zero Gate Voltage Drain Current I
DSS
  1.0 µA V
DS
= 30V, V
GS
= 0V
Gate-Source Leakage I
GSS
  100 nA V
GS
= 20V, V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V
GS(th)
1.0 1.5 2.0 V V
DS
= V
GS
, I
D
= 250µA
Static Drain-Source On-Resistance R
DS(ON)
 19 23
mΩ
V
GS
= 10V, I
D
= 6.5A
 22 30 V
GS
= 4.5V, I
D
= 6.0A
Diode Forward Voltage V
SD
 0.7 1.2 V V
GS
= 0V, I
S
= 1.0A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
C
iss
 643 
pF
V
DS
= 15V, V
GS
= 0V
f = 1.0MHz
Output Capacitance C
oss
 65 
Reverse Transfer Capacitance C
rss
 49 
Gate Resistance R
G
 2.5  Ω V
DS
= 0V, V
GS
= 0V, f = 1.0MHz
Total Gate Charge (V
GS
= 4.5V) Q
g
 5.7 
nC  V
DS
= 15V, I
D
= 4.0A
Total Gate Charge (V
GS
= 10V) Q
g
 12.5 
Gate-Source Charge Q
gs
 1.7 
Gate-Drain Charge Q
gd
 1.8 
Turn-On Delay Time t
D(on)
 2.2 
nS
V
GS
= 10V, V
DD
= 15V, R
G
= 6.0Ω,
I
D
= 6.5A
Turn-On Rise Time t
r
 2.5 
Turn-Off Delay Time t
D(off)
 12.1 
Turn-Off Fall Time t
f
 3.0 
Body Diode Reverse Recovery Time t
rr
 6.5  nS I
F
= 6.5A, dI/dt = 100A/μs
Body Diode Reverse Recovery Charge Q
rr
 1.7  nC I
F
= 6.5A, dI/dt = 100A/μs
Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.