Dmn3300u new prod uc t, Maximum ratings, Thermal characteristics – Diodes DMN3300U User Manual
Page 2: Electrical characteristics
DMN3300U
Document number: DS31181 Rev. 5 - 2
2 of 5
September 2012
© Diodes Incorporated
DMN3300U
NEW PROD
UC
T
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
Value
Units
Drain-Source Voltage
V
DSS
30 V
Gate-Source Voltage
V
GSS
±12 V
Continuous Drain Current (Note 5) V
GS
= 4.5V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
1.5
1.2
A
Continuous Drain Current (Note 6) V
GS
= 4.5V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
2.0
1.6
A
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
I
DM
8 A
Maximum Body Diode Continuous Current (Note 6)
I
S
1.6 A
Thermal Characteristics
Characteristic Symbol
Value
Units
Total Power Dissipation
(Note 5)
P
D
0.7
W
(Note 6)
1.3
Thermal Resistance, Junction to Ambient
(Note 5)
R
θJA
176
°C/W
(Note 6)
102
Thermal Resistance, Junction to Case
(Note 6)
R
θJC
45
Operating and Storage Temperature Range
T
J,
T
STG
-55 to +150
°C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
Min
Typ
Max
Unit
Test
Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV
DSS
30 37
⎯
V
V
GS
= 0V, I
D
= 100
μA
Zero Gate Voltage Drain Current
I
DSS
⎯
⎯
1
μA V
DS
= 30V, V
GS
= 0V
Gate-Source Leakage
I
GSS
⎯
⎯
±10
μA V
GS
=
±12V, V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V
GS(th)
0.5
⎯
1 V
V
DS
= V
GS
, I
D
= 250
μA
Static Drain-Source On-Resistance
R
DS (ON)
⎯
100
140
185
240
150
200
250
300
m
Ω
V
GS
= 4.5V, I
D
= 4.5A
V
GS
= 2.5V, I
D
= 3.5A
V
GS
= 1.8V, I
D
= 1.5A
V
GS
= 1.5V, I
D
= 0.5A
Forward Transfer Admittance
|Y
fs
|
⎯
5
⎯
S
V
DS
=5V, I
D
= 2.4A
Diode Forward Voltage
V
SD
⎯
0.8 1.1 V V
GS
= 0V, I = 0.5A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
C
iss
⎯
193
⎯
pF
V
DS
= 10V, V
GS
= 0V
f = 1.0MHz
Output Capacitance
C
oss
⎯
35
⎯
pF
Reverse Transfer Capacitance
C
rss
⎯
23
⎯
pF
Turn-On Delay Time
t
d(on)
⎯
7
⎯
ns
V
DD
= 10V, R
L
= 10
Ω
I
D
= 1A, V
GEN
= 4.5V, R
G
= 6
Ω
Rise Time
t
r
⎯
24
⎯
Turn-Off Delay Time
t
d(off)
⎯
24
⎯
Fall Time
t
f
⎯
12
⎯
Notes:
5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout
7 .Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing