Diodes DMP2066LSN User Manual
Dmp2066lsn new prod uc t, Features, Mechanical data
DMP2066LSN
Document number: DS31467 Rev. 4 - 2
1 of 5
August 2011
© Diodes Incorporated
DMP2066LSN
NEW PROD
UC
T
P-CHANNEL ENHANCEMENT MODE MOSFET
Features
• Low
R
DS(ON)
:
• 40
m
Ω @V
GS
= -4.5V
• 70
m
Ω @V
GS
= -2.5V
•
Low Input/Output Leakage
•
Lead Free By Design/RoHS Compliant (Note 3)
•
Qualified to AEC-Q101 Standards for High Reliability
•
"Green" Device (Note 4)
Mechanical Data
• Case:
SC-59
•
Case Material – Molded Plastic. UL Flammability Rating 94V-0
•
Moisture Sensitivity: Level 1 per J-STD-020D
•
Terminals: Finish - Matte Tin Solderable per MIL-STD-202,
Method 208
•
Terminal Connections: See Diagram
•
Marking Information: See Page 4
•
Ordering Information: See page 4
•
Weight: 0.014 grams (approximate)
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic Symbol
Value
Unit
Drain-Source Voltage
V
DSS
-20 V
Gate-Source Voltage
V
GSS
±12
V
Drain Current (Note 1) Continuous
T
A
= 25°C
T
A
= 70°C
I
D
-4.6
-3.7
A
Pulsed Drain Current (Note 2)
I
DM
-18 A
Body-Diode Continuous Current (Note 1)
I
S
2.0 A
Thermal Characteristics
Characteristic Symbol
Value
Unit
Total Power Dissipation (Note 1)
P
D
1.25 W
Thermal Resistance, Junction to Ambient (Note 1); Steady-State
R
θJA
100
°C/W
Operating and Storage Temperature Range
T
J
, T
STG
-55 to +150
°C
Notes:
1. Device mounted on 1"x1", FR-4 PC board with 2 oz. Copper and test pulse width t
≤10s.
2. Repetitive Rating, pulse width limited by junction temperature.
3. No purposefully added lead.
4. Diodes Inc's "Green" policy can be found on our webs
SC-59
TOP VIEW
Pin Configuration
Source
Gate
Drain
Internal Schematic
D
G
S