Diodes DMP3037LSS - Manual (Page 2)

DMP3037LSS
Document number: DS36775 Rev. 2 - 2
2 of 6
www.diodes.com
April 2014
© Diodes Incorporated
DMP3037LSS
NEW PROD
UC
T
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Drain-Source Voltage V
DSS
-30 V
Gate-Source Voltage V
GSS
±20 V
Continuous Drain Current (Note 6) V
GS
= -10V
T
A
= +25°C
T
A
= +70°C
I
D
-5.8
-4.6
A
Pulsed Drain Current (10µs pulse, duty cycle = 1%) I
DM
-40 A
Avalanche Current (Notes 7) L = 0.1mH I
AS
-17 A
Avalanche Energy (Notes 7) L = 0.1mH E
AS
15 mJ
Thermal Characteristics
Characteristic Symbol Value Units
Total Power Dissipation (Note 5)
T
A
= +25°C
P
D
1.2
W
T
A
= +70°C 0.8
Thermal Resistance, Junction to Ambient (Note 5)
Steady state
R
θJA
100
°C/W
t<10s 58
Total Power Dissipation (Note 6)
T
A
= +25°C
P
D
1.6
W
T
A
= +70°C 1.0
Thermal Resistance, Junction to Ambient (Note 6)
Steady state
R
θJA
77
°C/W t<10s 45
Thermal Resistance, Junction to Case (Note 6) R
θJC
10
Operating and Storage Temperature Range T
J,
T
STG
-55 to +150 °C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
BV
DSS
-30 — — V V
GS
= 0V, I
D
= -250μA
Zero Gate Voltage Drain Current T
J
= +25°C I
DSS
— — -1.0 μA V
DS
= -30V, V
GS
= 0V
Gate-Source Leakage I
GSS
— — ±100 nA V
GS
= ±20V, V
DS
= 0V
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
V
GS(th)
-1.0 — -2.4 V V
DS
= V
GS
, I
D
= -250μA
Static Drain-Source On-Resistance R
DS (ON)
—
19 32
mΩ
V
GS
= -10V, I
D
= -7A
28 50 V
GS
= -4.5V, I
D
= -5A
Diode Forward Voltage V
SD
— -0.75 -1.2 V V
GS
= 0V, I
S
= -1A
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
C
iss
— 931 — pF
V
DS
= -15V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance C
oss
— 120 — pF
Reverse Transfer Capacitance C
rss
— 102 — pF
Gate Resistance R
g
— 23 — Ω V
DS
= 0V, V
GS
= 0V, f = 1MHz
Total Gate Charge (V
GS
= -10V) Q
g
— 19.3 — nC V
DS
= -15V, I
D
= -7A
Total Gate Charge (V
GS
= -4.5V) Q
g
— 9.7 — nC
V
DS
= -15V, I
D
= -7A Gate-Source Charge Q
gs
— 2.5 — nC
Gate-Drain Charge Q
gd
— 3.6 — nC
Turn-On Delay Time t
D(on)
— 3.2 — ns
V
DS
= -15V, V
GS
= -10V,
R
L
= 2.15Ω, R
GEN
= 3Ω,
Turn-On Rise Time t
r
— 11.5 — ns
Turn-Off Delay Time t
D(off)
— 55.8 — ns
Turn-Off Fall Time t
f
— 30.8 — ns
Body Diode Reverse Recovery Time trr — 13.6 — nS IS = -7A, dI/dt = 100A/μs
Body Diode Reverse Recovery Charge Qrr — 3.4 — nC IS = -7A, dI/dt = 100A/μs
Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate
7. I
AS
and E
AS
rating are based on low frequency and duty cycles to keep T
J
= 25°C
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.