Diodes DMC2004LPK - Manual (Page 2)

DMC2004LPK
Document number: DS30854 Rev. 7 - 2
2 of 8
www.diodes.com
February 2013
© Diodes Incorporated
DMC2004LPK
NEW PROD
UC
T
Maximum Ratings N-CHANNEL – Q
1 (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Drain Source Voltage V
DSS
20 V
Gate-Source Voltage V
GSS
±8 V
Drain Current (Note 5)
T
A
= +25°C
T
A
= +85°C
I
D
750
540
mA
Maximum Ratings P-CHANNEL – Q
2 (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Drain Source Voltage V
DSS
-20 V
Gate-Source Voltage V
GSS
±8 V
Drain Current (Note 5)
T
A
= +25°C
T
A
= +85°C
I
D
-600
-430
mA
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Power Dissipation (Note 5) P
D
500 mW
Thermal Resistance, Junction to Ambient R
θJA
250 °C/W
Operating and Storage Temperature Range T
J
, T
STG
-65 to +150 °C
Electrical Characteristics N-CHANNEL – Q
1 (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
BV
DSS
20 — — V V
GS
= 0V, I
D
= 10µA
Zero Gate Voltage Drain Current I
DSS
— — 1 µA V
DS
= 16V, V
GS
= 0V
Gate-Source Leakage I
GSS
— — ± 1 µA V
GS
= ±4.5V, V
DS
= 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
V
GS(th)
0.5 — 1.0 V V
DS
= V
GS
, I
D
= 250µA
Static Drain-Source On-Resistance R
DS (ON)
—
—
— 0.4
0.5
0.7 0.55
0.70
0.90
Ω
V
GS
= 4.5V, I
D
= 540mA
V
GS
= 2.5V, I
D
= 500mA
V
GS
= 1.8V, I
D
= 350mA
Forward Transfer Admittance |Y
fs
| 200 — — mS V
DS
=10V, I
D
= 0.2A
Diode Forward Voltage (Note 6) V
SD
0.5 — 1.2 V V
GS
= 0V, I
S
= 115mA
DYNAMIC CHARACTERISTICS
Input Capacitance
C
iss
— — 150 pF
V
DS
= 16V, V
GS
= 0V
f = 1.0MHz
Output Capacitance C
oss
— — 25 pF
Reverse Transfer Capacitance C
rss
— — 20 pF
Electrical Characteristics P-CHANNEL – Q
2 (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
BV
DSS
-20 — — V V
GS
= 0V, I
D
= -250µA
Zero Gate Voltage Drain Current I
DSS
— — -1.0 µA V
DS
= -20V, V
GS
= 0V
Gate-Source Leakage I
GSS
— — ± 1.0 µA V
GS
= ±4.5V, V
DS
= 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
V
GS(th)
-0.5 — -1.0 V V
DS
= V
GS
, I
D
= -250µA
Static Drain-Source On-Resistance R
DS (ON)
—
0.7
1.1
1.7 0.9
1.4
2.0
Ω
V
GS
= -4.5V, I
D
= -430mA
V
GS
= -2.5V, I
D
= -300mA
V
GS
= -1.8V, I
D
= -150mA
Forward Transfer Admittance |Y
fs
| 200 — — mS V
DS
=10V, I
D
= 0.2A
Diode Forward Voltage (Note 5) V
SD
-0.5 — -1.2 V V
GS
= 0V, I
S
= -115mA
DYNAMIC CHARACTERISTICS
Input Capacitance
C
iss
— — 175 pF
V
DS
= -16V, V
GS
= 0V
f = 1.0MHz
Output Capacitance C
oss
— — 30 pF
Reverse Transfer Capacitance C
rss
— — 20 pF
Notes: 5. Device mounted on FR-4 PCB.
6. Short duration pulse test used to minimize self-heating effect.